FJP5554 Datasheet, Equivalent, Cross Reference Search
Type Designator: FJP5554
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 70 W
Maximum Collector-Base Voltage |Vcb|: 1050 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 15 V
Maximum Collector Current |Ic max|: 4 A
Forward Current Transfer Ratio (hFE), MIN: 45
Noise Figure, dB: -
Package: TO220
FJP5554 Transistor Equivalent Substitute - Cross-Reference Search
FJP5554 Datasheet (PDF)
fjp5554.pdf
October 2008FJP5554High Voltage Fast Switching TransistorFeatures Fast Speed Switching Wide Safe Operating Area Suitable for Electronic Ballast ApplicationTO-22011.Base 2.Collector 3.EmitterAbsolute Maximum RatingsSymbol Parameter Value UnitsVCBO Collector-Base Voltage 1050 VVCEO Collector-Emitter Voltage 400 VVEBO Emitter-Base Voltage 15 VIC Collector Cur
fjp5555.pdf
January 2010FJP5555NPN Silicon TransistorFeatures High Voltage Switch Mode Application Fast Speed Switching Wide Safe Operating Area Suitable for Electronic Ballast ApplicationTO-22011.Base 2.Collector 3.EmitterAbsolute Maximum Ratings TA=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 1050 V VCEO Collector-Emitter Vol
fjp5555.pdf
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Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP42 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .