2N1160 Specs and Replacement

Type Designator: 2N1160

Material of Transistor: Ge

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 90 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 20 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 100 °C

Electrical Characteristics

Transition Frequency (ft): 0.1 MHz

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO3

 2N1160 Substitution

- BJT ⓘ Cross-Reference Search

 

2N1160 datasheet

 9.1. Size:289K  rca

 2n1169.pdf pdf_icon

2N1160

... See More ⇒

Detailed specifications: 2N1155, 2N1156, 2N1157, 2N1157A, 2N1158, 2N1158A, 2N1159, 2N116, BD136, 2N1162, 2N1162A, 2N1163, 2N1163A, 2N1164, 2N1164A, 2N1165, 2N1165A

Keywords - 2N1160 pdf specs

 2N1160 cross reference

 2N1160 equivalent finder

 2N1160 pdf lookup

 2N1160 substitution

 2N1160 replacement