KSC5402DT Datasheet, Equivalent, Cross Reference Search
Type Designator: KSC5402DT
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 1000 V
Maximum Collector-Emitter Voltage |Vce|: 450 V
Maximum Emitter-Base Voltage |Veb|: 12 V
Maximum Collector Current |Ic max|: 2 A
Forward Current Transfer Ratio (hFE), MIN: 14
Noise Figure, dB: -
Package: TO220
KSC5402DT Transistor Equivalent Substitute - Cross-Reference Search
KSC5402DT Datasheet (PDF)
ksc5402dt.pdf
December 2009KSC5402D/KSC5402DTNPN Silicon Transistor, Planar Silicon TransistorFeaturesD-PAK High Voltage High Speed Power Switch ApplicationEquivalent Circuit Wide Safe Operating Area C1 Built-in Free Wheeling DiodeTO-220 Suitable for Electronic Ballast ApplicationB Small Variance in Storage Time Two Package Choices; D-PAK or TO-2201E1.Base
ksc5402d ksc5402dt.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
