KSC5402DT Datasheet. Specs and Replacement
Type Designator: KSC5402DT 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 1000 V
Maximum Collector-Emitter Voltage |Vce|: 450 V
Maximum Emitter-Base Voltage |Veb|: 12 V
Maximum Collector Current |Ic max|: 2 A
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 14
Package: TO220
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KSC5402DT datasheet
December 2009 KSC5402D/KSC5402DT NPN Silicon Transistor, Planar Silicon Transistor Features D-PAK High Voltage High Speed Power Switch Application Equivalent Circuit Wide Safe Operating Area C 1 Built-in Free Wheeling Diode TO-220 Suitable for Electronic Ballast Application B Small Variance in Storage Time Two Package Choices; D-PAK or TO-220 1 E 1.Base... See More ⇒
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
Detailed specifications: FJPF5021, FJPF5027, KSB834W, KSC5026M, KSC5305D, KSC5305DF, KSC5338D, KSC5402D, C1815, KSC5502, KSC5502D, KSC5502DT, KSC5603D, KSE13003T, KSE44H, KSE45H, MJD41CTF
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