2SC5888 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC5888
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 25 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 90 pF
Forward Current Transfer Ratio (hFE), MIN: 200
Noise Figure, dB: -
Package: TO220ML
2SC5888 Transistor Equivalent Substitute - Cross-Reference Search
2SC5888 Datasheet (PDF)
2sa2099 2sc5888.pdf
Ordering number : EN7331A2SA2099 / 2SC5888SANYO SemiconductorsDATA SHEETPNP / NPN Epitaxial Planar Silicon Transistors2SA2099 / 2SC5888High-Current Switching ApplicationsApplications Relay drivers, lamp drivers, motor drivers.Features Adoption of MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching.S
2sc5888.pdf
Ordering number : ENN73312SA2099 / 2SC5888PNP / NPN Epitaxial Planar Silicon Transistors2SA2099 / 2SC5888High-Current Switching ApplicationsApplicationsPackage Dimensions Relay drivers, lamp drivers, motor drivers.unit : mm2041AFeatures[2SA2099 / 2SC5888] Adoption of MBIT processes.4.510.02.8 Large current capacitance.3.2 Low collector-to-emitter
2sc5886a.pdf
2SC5886A TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5886A High-Speed Switching Applications Unit: mmDC/DC Converter Applications High DC current gain: hFE = 400 to 1000 (IC = 0.5 A) Low collector-emitter saturation: VCE (sat) = 0.22 V (max) High-speed switching: tf = 95 ns (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitColl
2sc5886.pdf
2SC5886 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5886 High-Speed Swtching Applications Unit: mm DC-DC Converter Applications High DC current gain: h = 400 to 1000 (I = 0.5 A) FE C Low collector-emitter saturation: V = 0.22 V (max) CE (sat) High-speed switching: t = 55 ns (typ.) fMaximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollect
2sa2098 2sa2098 2sc5887.pdf
Ordering number : ENN74952SA2098 / 2SC5887PNP / NPN Epitaxial Planar Silicon Transistors2SA2098 / 2SC5887High-Current Switching ApplicationsApplications Package Dimensions Relay drivers, lamp drivers, motor drivers. unit : mm2041AFeatures [2SA2098 / 2SC5887]4.5 Adoption of MBIT processes. 10.02.8 Large current capacitance.3.2 Low collector-to-emitter satu
2sc5880.pdf
2SC5880 Transistors Power transistor (60V, 2A) 2SC5880 Dimensions (Unit : mm) Features 1) High speed switching. ATV(tf : Typ. : 35ns at IC = 2A) 2) Low saturation voltage, typically :(Typ. 200mV at IC = 1.0A, IB = 100mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SA2093 (1) Emitter(2) CollectorTaping specifications
2sc5885.pdf
Power Transistors2SC5885Silicon NPN triple diffusion mesa typeHorizontal deflection output for TV, CRT monitorUnit: mm9.90.3 4.60.22.90.2 Features High breakdown voltage: VCBO 1 500 V 3.20.1 Wide safe operation area Built-in dumper diode0.760.061.250.11.450.152.60.11.20.15 Absolute Maximum Ratings TC = 25C0.70.10.750.1
2sc5884.pdf
Power Transistors2SC5884Silicon NPN triple diffusion mesa typeHorizontal deflection output for TVUnit: mm9.90.3 4.60.22.90.2 Features High breakdown voltage: VCBO 1 500 V 3.20.1 Wide safe operation area Built-in dumper diode0.760.061.250.11.450.152.60.11.20.15 Absolute Maximum Ratings TC = 25C0.70.10.750.1Paramet
2sc5889.pdf
UTC 2SC5889 NPN EPITAXIAL SILICON TRANSISTOR DC/DC CONVERTER APPLICATIONS FEATURES *Large current capacitance. *Low collector-emitter saturation voltage. *High-speed switching 1*High allowable power dissipation. APPLICATIONS * relay drivers, lamp drivers, motor drivers, strobes. TO-92SP1.EMITTER 2.COLLECTOR 3.BASE ABSOLUTE MAXIMUM RATINGS (Ta=25) PARAMETER SYMBOL
2sc5886a.pdf
isc Silicon NPN Power Transistor 2SC5886ADESCRIPTIONHigh switching speed timeLow collector-to-emitter saturation voltageFast switching speedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh-Speed Switching ApplicationsDC/DC Converter ApplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV C
2sc5885.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5885DESCRIPTIONHigh Breakdown VoltageWide Area of Safe OperationBuilt-in Damper Diode100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHorizontal deflection output for TV, CRT monitorapplicaitions.ABSOLUTE MAXIMUM RATINGS(T =25)aSYM
2sc5887.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5887DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOHigh Speed SwitchingLow Saturation VoltageComplement to Type 2SA2098100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSRelay drivers, lamp drivers, motor drivers.
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .