2SC5888 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Ordering number EN7331A 2SA2099 / 2SC5888 SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SA2099 / 2SC5888 High-Current Switching Applications Applications Relay drivers, lamp drivers, motor drivers. Features Adoption of MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. S

Ordering number ENN7331 2SA2099 / 2SC5888 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2099 / 2SC5888 High-Current Switching Applications Applications Package Dimensions Relay drivers, lamp drivers, motor drivers. unit mm 2041A Features [2SA2099 / 2SC5888] Adoption of MBIT processes. 4.5 10.0 2.8 Large current capacitance. 3.2 Low collector-to-emitter

2SC5886A TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5886A High-Speed Switching Applications Unit mm DC/DC Converter Applications High DC current gain hFE = 400 to 1000 (IC = 0.5 A) Low collector-emitter saturation VCE (sat) = 0.22 V (max) High-speed switching tf = 95 ns (typ.) Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Coll

2SC5886 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5886 High-Speed Swtching Applications Unit mm DC-DC Converter Applications High DC current gain h = 400 to 1000 (I = 0.5 A) FE C Low collector-emitter saturation V = 0.22 V (max) CE (sat) High-speed switching t = 55 ns (typ.) f Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collect

Ordering number ENN7495 2SA2098 / 2SC5887 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2098 / 2SC5887 High-Current Switching Applications Applications Package Dimensions Relay drivers, lamp drivers, motor drivers. unit mm 2041A Features [2SA2098 / 2SC5887] 4.5 Adoption of MBIT processes. 10.0 2.8 Large current capacitance. 3.2 Low collector-to-emitter satu

2SC5880 Transistors Power transistor (60V, 2A) 2SC5880 Dimensions (Unit mm) Features 1) High speed switching. ATV (tf Typ. 35ns at IC = 2A) 2) Low saturation voltage, typically (Typ. 200mV at IC = 1.0A, IB = 100mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SA2093 (1) Emitter (2) Collector Taping specifications

Power Transistors 2SC5885 Silicon NPN triple diffusion mesa type Horizontal deflection output for TV, CRT monitor Unit mm 9.9 0.3 4.6 0.2 2.9 0.2 Features High breakdown voltage VCBO 1 500 V 3.2 0.1 Wide safe operation area Built-in dumper diode 0.76 0.06 1.25 0.1 1.45 0.15 2.6 0.1 1.2 0.15 Absolute Maximum Ratings TC = 25 C 0.7 0.1 0.75 0.1

Power Transistors 2SC5884 Silicon NPN triple diffusion mesa type Horizontal deflection output for TV Unit mm 9.9 0.3 4.6 0.2 2.9 0.2 Features High breakdown voltage VCBO 1 500 V 3.2 0.1 Wide safe operation area Built-in dumper diode 0.76 0.06 1.25 0.1 1.45 0.15 2.6 0.1 1.2 0.15 Absolute Maximum Ratings TC = 25 C 0.7 0.1 0.75 0.1 Paramet

UTC 2SC5889 NPN EPITAXIAL SILICON TRANSISTOR DC/DC CONVERTER APPLICATIONS FEATURES *Large current capacitance. *Low collector-emitter saturation voltage. *High-speed switching 1 *High allowable power dissipation. APPLICATIONS * relay drivers, lamp drivers, motor drivers, strobes. TO-92SP 1.EMITTER 2.COLLECTOR 3.BASE ABSOLUTE MAXIMUM RATINGS (Ta=25 ) PARAMETER SYMBOL

isc Silicon NPN Power Transistor 2SC5886A DESCRIPTION High switching speed time Low collector-to-emitter saturation voltage Fast switching speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High-Speed Switching Applications DC/DC Converter Applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V C

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5885 DESCRIPTION High Breakdown Voltage Wide Area of Safe Operation Built-in Damper Diode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Horizontal deflection output for TV, CRT monitor applicaitions. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYM

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5887 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 50V(Min) (BR)CEO High Speed Switching Low Saturation Voltage Complement to Type 2SA2098 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Relay drivers, lamp drivers, motor drivers.