2N5539 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N5539
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 175 V
Maximum Collector-Emitter Voltage |Vce|: 130 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 20 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 20 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: TO61
Datasheet: 2N5531 , 2N5532 , 2N5533 , 2N5534 , 2N5535 , 2N5536 , 2N5537 , 2N5538 , 13001-A , 2N554 , 2N5540 , 2N5541 , 2N5542 , 2N555 , 2N5550 , 2N5551 , 2N5552 .