All Transistors. EC4H09C Datasheet

 

EC4H09C Datasheet and Replacement


   Type Designator: EC4H09C
   SMD Transistor Code: M
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.12 W
   Maximum Collector-Base Voltage |Vcb|: 10 V
   Maximum Collector-Emitter Voltage |Vce|: 3.5 V
   Maximum Emitter-Base Voltage |Veb|: 2.5 V
   Maximum Collector Current |Ic max|: 0.04 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 20000 MHz
   Forward Current Transfer Ratio (hFE), MIN: 70
   Noise Figure, dB: -
   Package: ECSP1008-4
 

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EC4H09C Datasheet (PDF)

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EC4H09C

Ordering number : ENA1267 EC4H09CSANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorUHF to X Band Low-Noise AmplifierEC4H09Cand OSC ApplicationsFeatures High cut-off frequency : fT=26GHz typ (VCE=3V). Low operating voltage. High gain : S21e2=16.5dB typ (f=2GHz). Halogen free compliance (UL94 HB).SpecificationsAbsolute Maximum Ratings

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: DTL3403

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