EC4H09C Datasheet and Replacement

   Type Designator: EC4H09C
   SMD Transistor Code: M
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.12 W
   Maximum Collector-Base Voltage |Vcb|: 10 V
   Maximum Collector-Emitter Voltage |Vce|: 3.5 V
   Maximum Emitter-Base Voltage |Veb|: 2.5 V
   Maximum Collector Current |Ic max|: 0.04 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 20000 MHz
   Forward Current Transfer Ratio (hFE), MIN: 70
   Noise Figure, dB: -
   Package: ECSP1008-4
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