EC4H09C Datasheet, Equivalent, Cross Reference Search
Type Designator: EC4H09C
SMD Transistor Code: M
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.12 W
Maximum Collector-Base Voltage |Vcb|: 10 V
Maximum Collector-Emitter Voltage |Vce|: 3.5 V
Maximum Emitter-Base Voltage |Veb|: 2.5 V
Maximum Collector Current |Ic max|: 0.04 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 20000 MHz
Forward Current Transfer Ratio (hFE), MIN: 70
Noise Figure, dB: -
Package: ECSP1008-4
EC4H09C Transistor Equivalent Substitute - Cross-Reference Search
EC4H09C Datasheet (PDF)
..1. Size:47K sanyo
ec4h09c.pdf
ec4h09c.pdf
Ordering number : ENA1267 EC4H09CSANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorUHF to X Band Low-Noise AmplifierEC4H09Cand OSC ApplicationsFeatures High cut-off frequency : fT=26GHz typ (VCE=3V). Low operating voltage. High gain : S21e2=16.5dB typ (f=2GHz). Halogen free compliance (UL94 HB).SpecificationsAbsolute Maximum Ratings
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
