EC4H09C pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

EC4H09C Specs and Replacement

Type Designator: EC4H09C

SMD Transistor Code: M

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.12 W

Maximum Collector-Base Voltage |Vcb|: 10 V

Maximum Collector-Emitter Voltage |Vce|: 3.5 V

Maximum Emitter-Base Voltage |Veb|: 2.5 V

Maximum Collector Current |Ic max|: 0.04 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 20000 MHz

Forward Current Transfer Ratio (hFE), MIN: 70

Noise Figure, dB: -

Package: ECSP1008-4

EC4H09C Substitution

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EC4H09C datasheet

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Ordering number ENA1267 EC4H09C SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor UHF to X Band Low-Noise Amplifier EC4H09C and OSC Applications Features High cut-off frequency fT=26GHz typ (VCE=3V). Low operating voltage. High gain S21e 2=16.5dB typ (f=2GHz). Halogen free compliance (UL94 HB). Specifications Absolute Maximum Ratings... See More ⇒

Detailed specifications: DTC115EE, DTC123JE, DTC124EE, DTC124XE, DTC143EE, DTC143ZE, DTC144EE, EC3H02BA, 13009, ECH8501, EMD4DXV6, EMF18, EMF5XV6T5, EMG2DXV5, EMG5DXV5, EMX1, EMX2DXV6