EMF5XV6T5 pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

EMF5XV6T5 Specs and Replacement

Type Designator: EMF5XV6T5

SMD Transistor Code: UY

Material of Transistor: Si

Polarity: Pre-Biased-NPN*PNP

Built in Bias Resistor R1 = 47 kOhm

Built in Bias Resistor R2 = 47 kOhm

Typical Resistor Ratio R1/R2 = 1

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.5 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 80

Noise Figure, dB: -

Package: SOT563

EMF5XV6T5 Substitution

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EMF5XV6T5 datasheet

0.1. Size:69K onsemi

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EMF5XV6T5 Preferred Devices Power Management, Dual Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http //onsemi.com Features Simplifies Circuit Design (3) (2) (1) Reduces Board Space Reduces Component Count Q1 These are Pb-Free Devices Q2 MAXIMUM RATINGS R2 R1 Rating Symbol Value Unit (4) (5) (6) Q1 (TA = 25 C unless o... See More ⇒

Detailed specifications: DTC143EE, DTC143ZE, DTC144EE, EC3H02BA, EC4H09C, ECH8501, EMD4DXV6, EMF18, 2N2222A, EMG2DXV5, EMG5DXV5, EMX1, EMX2DXV6, EMZ1, FH102A, HN1B01FDW1, IMH20TR1