All Transistors. EMF5XV6T5 Datasheet

 

EMF5XV6T5 Datasheet and Replacement


   Type Designator: EMF5XV6T5
   SMD Transistor Code: UY
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN*PNP
   Built in Bias Resistor R1 = 47 kOhm
   Built in Bias Resistor R2 = 47 kOhm
   Typical Resistor Ratio R1/R2 = 1
   Maximum Collector Power Dissipation (Pc): 0.5 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: SOT563
 

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EMF5XV6T5 Datasheet (PDF)

 0.1. Size:69K  onsemi
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EMF5XV6T5

EMF5XV6T5Preferred DevicesPower Management,Dual TransistorsNPN Silicon Surface Mount Transistorswith Monolithic Bias Resistor Networkhttp://onsemi.comFeatures Simplifies Circuit Design(3) (2) (1) Reduces Board Space Reduces Component CountQ1 These are Pb-Free DevicesQ2MAXIMUM RATINGSR2 R1Rating Symbol Value Unit(4) (5) (6)Q1 (TA = 25C unless o

Datasheet: DTC143EE , DTC143ZE , DTC144EE , EC3H02BA , EC4H09C , ECH8501 , EMD4DXV6 , EMF18 , 2SD1047 , EMG2DXV5 , EMG5DXV5 , EMX1 , EMX2DXV6 , EMZ1 , FH102A , HN1B01FDW1 , IMH20TR1 .

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