EMG2DXV5 Datasheet, Equivalent, Cross Reference Search
Type Designator: EMG2DXV5
SMD Transistor Code: UP
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 47 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 1
Maximum Collector Power Dissipation (Pc): 0.23
W
Maximum Collector-Base Voltage |Vcb|: 50
V
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Collector Current |Ic max|: 0.1
A
Max. Operating Junction Temperature (Tj): 150
°C
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: SOT553
EMG2DXV5 Transistor Equivalent Substitute - Cross-Reference Search
EMG2DXV5 Datasheet (PDF)
emg2dxv5t1 emg5dxv5 emg2dxv5t5g emg5dxv5t1.pdf
EMG2DXV5T1,EMG5DXV5T1Preferred DevicesDual Bias ResistorTransistorsNPN Silicon Surface Mount Transistorshttp://onsemi.comwith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias ResistorNPN SILICONTransistor) contains a single transistor with a monolithic bias net
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
