EMG2DXV5 Specs and Replacement
Type Designator: EMG2DXV5
SMD Transistor Code: UP
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 47 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 1
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.23 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 80
Package: SOT553
EMG2DXV5 Substitution
- BJT ⓘ Cross-Reference Search
EMG2DXV5 datasheet
emg2dxv5t1 emg5dxv5 emg2dxv5t5g emg5dxv5t1.pdf 
EMG2DXV5T1, EMG5DXV5T1 Preferred Devices Dual Bias Resistor Transistors NPN Silicon Surface Mount Transistors http //onsemi.com with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor NPN SILICON Transistor) contains a single transistor with a monolithic bias net... See More ⇒
Detailed specifications: DTC143ZE, DTC144EE, EC3H02BA, EC4H09C, ECH8501, EMD4DXV6, EMF18, EMF5XV6T5, 2SD718, EMG5DXV5, EMX1, EMX2DXV6, EMZ1, FH102A, HN1B01FDW1, IMH20TR1, MBT2222ADW1T1
Keywords - EMG2DXV5 pdf specs
EMG2DXV5 cross reference
EMG2DXV5 equivalent finder
EMG2DXV5 pdf lookup
EMG2DXV5 substitution
EMG2DXV5 replacement
