FH102A Datasheet, Equivalent, Cross Reference Search
Type Designator: FH102A
SMD Transistor Code: 102
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 10 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 0.07 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 5000 MHz
Collector Capacitance (Cc): 0.75 pF
Forward Current Transfer Ratio (hFE), MIN: 90
Noise Figure, dB: -
Package: MCP6
FH102A Transistor Equivalent Substitute - Cross-Reference Search
FH102A Datasheet (PDF)
fh102a.pdf
Ordering number : ENA1125 FH102ASANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon Composite TransistorHigh-Frequency Low-Noise Amplifier,FH102ADifferential Amplifier ApplicationsFeatures Composite type with 2 transistors contained in the MCP package currently in use, improving the mounting efficiencygreatly. The FH102A is formed with two chips, being equivalen
fh102.pdf
Ordering number : EN5874NPN Epitaxial Planar Silicon Composite TransistorFH102High-Frequency Low-Noise Amp,Differential Amp ApplicationsFeaturesPackage Dimensions Composite type with 2 transistors contained in the MCPunit: mmpackage currently in use, improving the mounting2149-MCP6efficiency greatly. The FH102 is formed with two chips, being equivalent to[FH102]
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , BC327 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: 2SB265
