FH102A Specs and Replacement
Type Designator: FH102A
SMD Transistor Code: 102
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 10 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 0.07 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 5000 MHz
Collector Capacitance (Cc): 0.75 pF
Forward Current Transfer Ratio (hFE), MIN: 90
Package: MCP6
FH102A Substitution
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FH102A datasheet
Ordering number ENA1125 FH102A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Composite Transistor High-Frequency Low-Noise Amplifier, FH102A Differential Amplifier Applications Features Composite type with 2 transistors contained in the MCP package currently in use, improving the mounting efficiency greatly. The FH102A is formed with two chips, being equivalen... See More ⇒
Ordering number EN5874 NPN Epitaxial Planar Silicon Composite Transistor FH102 High-Frequency Low-Noise Amp, Differential Amp Applications Features Package Dimensions Composite type with 2 transistors contained in the MCP unit mm package currently in use, improving the mounting 2149-MCP6 efficiency greatly. The FH102 is formed with two chips, being equivalent to [FH102] ... See More ⇒
Detailed specifications: EMD4DXV6, EMF18, EMF5XV6T5, EMG2DXV5, EMG5DXV5, EMX1, EMX2DXV6, EMZ1, BC327, HN1B01FDW1, IMH20TR1, MBT2222ADW1T1, MBT35200, MBT3904DW1, MBT3906DW1, MBT3946DW1T1, MBT6429DW1
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