All Transistors. FH102A Datasheet

 

FH102A Datasheet and Replacement


   Type Designator: FH102A
   SMD Transistor Code: 102
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 10 V
   Maximum Emitter-Base Voltage |Veb|: 2 V
   Maximum Collector Current |Ic max|: 0.07 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 5000 MHz
   Collector Capacitance (Cc): 0.75 pF
   Forward Current Transfer Ratio (hFE), MIN: 90
   Noise Figure, dB: -
   Package: MCP6
 

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FH102A Datasheet (PDF)

 ..1. Size:278K  sanyo
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FH102A

Ordering number : ENA1125 FH102ASANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon Composite TransistorHigh-Frequency Low-Noise Amplifier,FH102ADifferential Amplifier ApplicationsFeatures Composite type with 2 transistors contained in the MCP package currently in use, improving the mounting efficiencygreatly. The FH102A is formed with two chips, being equivalen

 9.1. Size:66K  sanyo
 fh102.pdf pdf_icon

FH102A

Ordering number : EN5874NPN Epitaxial Planar Silicon Composite TransistorFH102High-Frequency Low-Noise Amp,Differential Amp ApplicationsFeaturesPackage Dimensions Composite type with 2 transistors contained in the MCPunit: mmpackage currently in use, improving the mounting2149-MCP6efficiency greatly. The FH102 is formed with two chips, being equivalent to[FH102]

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