HN1B01FDW1 Datasheet and Replacement
Type Designator: HN1B01FDW1
SMD Transistor Code: R9
Material of Transistor: Si
Polarity: NPN*PNP
Maximum Collector Power Dissipation (Pc): 0.38 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 200
Noise Figure, dB: -
Package: SC-74 SC59-ML
HN1B01FDW1 Substitution
HN1B01FDW1 Datasheet (PDF)
hn1b01fdw1t1g shn1b01fdw1t1g.pdf

HN1B01FDW1T1G,SHN1B01FDW1T1GComplementary DualGeneral PurposeAmplifier Transistorwww.onsemi.comPNP and NPN Surface MountFeaturesSC-74 High Voltage and High Current: VCEO = 50 V, IC = 200 mACASE 318F High hFE: hFE = 200X400 STYLE 3 Moisture Sensitivity Level: 1 ESD Rating(6) (5) (4) Human Body Model: 3A Machine Model: C S Prefix for Automoti
hn1b01fdw1t1-d.pdf

HN1B01FDW1T1Complementary DualGeneral PurposeAmplifier TransistorPNP and NPN Surface Mounthttp://onsemi.comFeatures(6) (5) (4) High Voltage and High Current: VCEO = 50 V, IC = 200 mA High hFE: hFE = 200X400Q1 Q2 Moisture Sensitivity Level: 1 ESD Rating - Human Body Model: 3A- Machine Model: C(1) (2) (3) Pb-Free Package is AvailableMAXIMUM RATINGS (
shn1b01fdw1t1g.pdf

HN1B01FDW1T1G,SHN1B01FDW1T1GComplementary DualGeneral PurposeAmplifier Transistorhttp://onsemi.comPNP and NPN Surface MountFeaturesSC-74 High Voltage and High Current: VCEO = 50 V, IC = 200 mACASE 318F High hFE: hFE = 200X400 STYLE 3 Moisture Sensitivity Level: 1 ESD Rating(6) (5) (4) Human Body Model: 3A Machine Model: CQ1 Q2 AEC-Q101 Qu
Datasheet: EMF18 , EMF5XV6T5 , EMG2DXV5 , EMG5DXV5 , EMX1 , EMX2DXV6 , EMZ1 , FH102A , TIP31C , IMH20TR1 , MBT2222ADW1T1 , MBT35200 , MBT3904DW1 , MBT3906DW1 , MBT3946DW1T1 , MBT6429DW1 , MCH3007 .
History: 2N846A | LBC858BDW1T1G
Keywords - HN1B01FDW1 transistor datasheet
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History: 2N846A | LBC858BDW1T1G



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