HN1B01FDW1 pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

HN1B01FDW1 Specs and Replacement

Type Designator: HN1B01FDW1

SMD Transistor Code: R9

Material of Transistor: Si

Polarity: NPN*PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.38 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 0.2 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 200

Noise Figure, dB: -

Package: SC-74 SC59-ML

HN1B01FDW1 Substitution

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HN1B01FDW1 datasheet

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hn1b01fdw1t1g shn1b01fdw1t1g.pdf pdf_icon

HN1B01FDW1T1G, SHN1B01FDW1T1G Complementary Dual General Purpose Amplifier Transistor www.onsemi.com PNP and NPN Surface Mount Features SC-74 High Voltage and High Current VCEO = 50 V, IC = 200 mA CASE 318F High hFE hFE = 200X400 STYLE 3 Moisture Sensitivity Level 1 ESD Rating (6) (5) (4) Human Body Model 3A Machine Model C S Prefix for Automoti... See More ⇒

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HN1B01FDW1T1 Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount http //onsemi.com Features (6) (5) (4) High Voltage and High Current VCEO = 50 V, IC = 200 mA High hFE hFE = 200X400 Q1 Q2 Moisture Sensitivity Level 1 ESD Rating - Human Body Model 3A - Machine Model C (1) (2) (3) Pb-Free Package is Available MAXIMUM RATINGS (... See More ⇒

0.3. Size:103K onsemi

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HN1B01FDW1T1G, SHN1B01FDW1T1G Complementary Dual General Purpose Amplifier Transistor http //onsemi.com PNP and NPN Surface Mount Features SC-74 High Voltage and High Current VCEO = 50 V, IC = 200 mA CASE 318F High hFE hFE = 200X400 STYLE 3 Moisture Sensitivity Level 1 ESD Rating (6) (5) (4) Human Body Model 3A Machine Model C Q1 Q2 AEC-Q101 Qu... See More ⇒

Detailed specifications: EMF18, EMF5XV6T5, EMG2DXV5, EMG5DXV5, EMX1, EMX2DXV6, EMZ1, FH102A, A733, IMH20TR1, MBT2222ADW1T1, MBT35200, MBT3904DW1, MBT3906DW1, MBT3946DW1T1, MBT6429DW1, MCH3007