MCH6001 Datasheet and Replacement
Type Designator: MCH6001
SMD Transistor Code: GT
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.4 W
Maximum Collector-Base Voltage |Vcb|: 15 V
Maximum Collector-Emitter Voltage |Vce|: 8 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 13000 MHz
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: MCPH6
MCH6001 Substitution
MCH6001 Datasheet (PDF)
mch6001.pdf

MCH6001Ordering number : ENA1601SANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon Composite TransistorMCH6001High Frequency Low-Noise AmplifierFeatures Low-noise use : NF=1.2dB typ (f=1GHz). High cut-off frequency : fT=16GHz typ (VCE=5V). High gain : S21e =16dB typ (f=1GHz). | |2 Composite type with 2 RF transistor MCH4020 in one package facilitating
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
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