MCH6001 Specs and Replacement
Type Designator: MCH6001
SMD Transistor Code: GT
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.4 W
Maximum Collector-Base Voltage |Vcb|: 15 V
Maximum Collector-Emitter Voltage |Vce|: 8 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 13000 MHz
Forward Current Transfer Ratio (hFE), MIN: 60
Package: MCPH6
MCH6001 Substitution
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MCH6001 datasheet
MCH6001 Ordering number ENA1601 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Composite Transistor MCH6001 High Frequency Low-Noise Amplifier Features Low-noise use NF=1.2dB typ (f=1GHz). High cut-off frequency fT=16GHz typ (VCE=5V). High gain S21e =16dB typ (f=1GHz). 2 Composite type with 2 RF transistor MCH4020 in one package facilitating... See More ⇒
Detailed specifications: MCH4009, MCH4014, MCH4015, MCH4016, MCH4017, MCH4020, MCH4021, MCH5541, 2SD2499, MCH6102, MCH6202, MCH6541, MCH6542, MCH6544, MCH6545, MJ21195, MJ21196
Keywords - MCH6001 pdf specs
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