NSB1706DMW5 Datasheet. Specs and Replacement

Type Designator: NSB1706DMW5  📄📄 

SMD Transistor Code: U6

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.187 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 80

Noise Figure, dB: -

Package: SC88A SC70 SOT323

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NSB1706DMW5 datasheet

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NSB1706DMW5

NSB1706DMW5T1G Dual Bias Resistor Transistor NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor (BRT) contains a single transistor with http //onsemi.com a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are designed to replace a single device and its... See More ⇒

 0.2. Size:117K  onsemi

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NSB1706DMW5

NSB1706DMW5T1G Dual Bias Resistor Transistor NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor (BRT) contains a single transistor with http //onsemi.com a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are designed to replace a single device and its... See More ⇒

Detailed specifications: NJL4302D, NJT4030P, NJT4031NT1G, NJW0302, NJW1302, NJW21194, NJX1675P, NS2029M3, A1013, NSB4904DW1, NSB9435, NSL12AW, NSM6056MT1G, NSM80100M, NSM80101M, NSS12100M3T5G, NSS12100UW

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