All Transistors. NSS35200CF8T1G Datasheet

 

NSS35200CF8T1G Datasheet and Replacement


   Type Designator: NSS35200CF8T1G
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 2.75 W
   Maximum Collector-Emitter Voltage |Vce|: 35 V
   Maximum Collector Current |Ic max|: 7 A
   Transition Frequency (ft): 100 MHz
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: CHIPFET-8
 

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NSS35200CF8T1G Datasheet (PDF)

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NSS35200CF8T1G

NSS35200MR6T1G35 V, 5 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowhttp://onsemi.comsaturation voltage (VCE(sat)) and high current gain capability. Theseare designed for use in low voltage, high speed switching applications35 VOLTSwhere affordable efficient energy control

Datasheet: NSS20500UW3 , NSS20501UW3 , NSS20601CF8 , NSS30070MR6T1G , NSS30071MR6T1G , NSS30100LT1G , NSS30101LT1G , NSS30201MR6T1G , 2SD882 , NSS35200MR6T1G , NSS40200L , NSS40200UW6T1G , NSS40201L , NSS40300 , NSS40300DD , NSS40300MD , NSS40301 .

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