All Transistors. NSS35200CF8T1G Datasheet

 

NSS35200CF8T1G Datasheet, Equivalent, Cross Reference Search


   Type Designator: NSS35200CF8T1G
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 2.75 W
   Maximum Collector-Emitter Voltage |Vce|: 35 V
   Maximum Collector Current |Ic max|: 7 A
   Transition Frequency (ft): 100 MHz
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: CHIPFET-8

 NSS35200CF8T1G Transistor Equivalent Substitute - Cross-Reference Search

   

NSS35200CF8T1G Datasheet (PDF)

 6.1. Size:114K  onsemi
 nss35200mr6t1g.pdf

NSS35200CF8T1G NSS35200CF8T1G

NSS35200MR6T1G35 V, 5 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowhttp://onsemi.comsaturation voltage (VCE(sat)) and high current gain capability. Theseare designed for use in low voltage, high speed switching applications35 VOLTSwhere affordable efficient energy control

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2S91

 

 
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