NSS35200MR6T1G Specs and Replacement
Type Designator: NSS35200MR6T1G
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1.75 W
Maximum Collector-Emitter Voltage |Vce|: 35 V
Maximum Collector Current |Ic max|: 5 A
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN: 100
Package: TSOP-6
NSS35200MR6T1G Substitution
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NSS35200MR6T1G datasheet
NSS35200MR6T1G 35 V, 5 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low http //onsemi.com saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications 35 VOLTS where affordable efficient energy control ... See More ⇒
Detailed specifications: NSS20501UW3, NSS20601CF8, NSS30070MR6T1G, NSS30071MR6T1G, NSS30100LT1G, NSS30101LT1G, NSS30201MR6T1G, NSS35200CF8T1G, A42, NSS40200L, NSS40200UW6T1G, NSS40201L, NSS40300, NSS40300DD, NSS40300MD, NSS40301, NSS40301MD
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