All Transistors. NSS35200MR6T1G Datasheet

 

NSS35200MR6T1G Datasheet and Replacement


   Type Designator: NSS35200MR6T1G
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 1.75 W
   Maximum Collector-Emitter Voltage |Vce|: 35 V
   Maximum Collector Current |Ic max|: 5 A
   Transition Frequency (ft): 100 MHz
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: TSOP-6
 

 NSS35200MR6T1G Substitution

   - BJT ⓘ Cross-Reference Search

   

NSS35200MR6T1G Datasheet (PDF)

 ..1. Size:114K  onsemi
 nss35200mr6t1g.pdf pdf_icon

NSS35200MR6T1G

NSS35200MR6T1G35 V, 5 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowhttp://onsemi.comsaturation voltage (VCE(sat)) and high current gain capability. Theseare designed for use in low voltage, high speed switching applications35 VOLTSwhere affordable efficient energy control

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SC4793 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: 2SC1161A | 2SD2656 | KT316AM | NSD204 | A179A | 2SD339-2 | CTP1330

Keywords - NSS35200MR6T1G transistor datasheet

 NSS35200MR6T1G cross reference
 NSS35200MR6T1G equivalent finder
 NSS35200MR6T1G lookup
 NSS35200MR6T1G substitution
 NSS35200MR6T1G replacement

 

 
Back to Top

 


 
.