NSS35200MR6T1G Datasheet, Equivalent, Cross Reference Search
Type Designator: NSS35200MR6T1G
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 1.75 W
Maximum Collector-Emitter Voltage |Vce|: 35 V
Maximum Collector Current |Ic max|: 5 A
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TSOP-6
NSS35200MR6T1G Transistor Equivalent Substitute - Cross-Reference Search
NSS35200MR6T1G Datasheet (PDF)
..1. Size:114K onsemi
nss35200mr6t1g.pdf
nss35200mr6t1g.pdf
NSS35200MR6T1G35 V, 5 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowhttp://onsemi.comsaturation voltage (VCE(sat)) and high current gain capability. Theseare designed for use in low voltage, high speed switching applications35 VOLTSwhere affordable efficient energy control
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
