BFG325 Datasheet. Specs and Replacement
Type Designator: BFG325 📄📄
SMD Transistor Code: S2*
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.21 W
Maximum Collector-Base Voltage |Vcb|: 15 V
Maximum Collector-Emitter Voltage |Vce|: 6 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 0.035 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 14000 MHz
Forward Current Transfer Ratio (hFE), MIN: 60
Package: SOT143R
BFG325 Substitution
- BJT ⓘ Cross-Reference Search
BFG325 datasheet
BFG325/XR NPN 14 GHz wideband transistor Rev. 01 2 February 2005 Product data sheet 1. Product profile 1.1 General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143R plastic package. 1.2 Features High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability 1.3 Applications Intended for Radio Fre... See More ⇒
BFG325W/XR NPN 14 GHz wideband transistor Rev. 01 2 February 2005 Product data sheet 1. Product profile 1.1 General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. 1.2 Features High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability 1.3 Applications Intended for Radio Fr... See More ⇒
Detailed specifications: BCW61C, BF820W, BF824W, BFG10W, BFG25A, BFG25AW, BFG310, BFG310W, 2N5551, BFG325W, BFG410W, BFG424F, BFG424W, BFG540, BFG540W, BFG541, BFQ540
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