BFG325 Datasheet and Replacement
Type Designator: BFG325
SMD Transistor Code: S2*
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.21 W
Maximum Collector-Base Voltage |Vcb|: 15 V
Maximum Collector-Emitter Voltage |Vce|: 6 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 0.035 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 14000 MHz
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: SOT143R
BFG325 Datasheet (PDF)
bfg325 xr.pdf

BFG325/XRNPN 14 GHz wideband transistorRev. 01 2 February 2005 Product data sheet1. Product profile1.1 General descriptionNPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143R plastic package.1.2 Features High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability1.3 Applications Intended for Radio Fre
bfg325w xr.pdf

BFG325W/XRNPN 14 GHz wideband transistorRev. 01 2 February 2005 Product data sheet1. Product profile1.1 General descriptionNPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package.1.2 Features High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability1.3 Applications Intended for Radio Fr
Datasheet: BCW61C , BF820W , BF824W , BFG10W , BFG25A , BFG25AW , BFG310 , BFG310W , AC125 , BFG325W , BFG410W , BFG424F , BFG424W , BFG540 , BFG540W , BFG541 , BFQ540 .
History: KST64 | BC559 | 2SC4512
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History: KST64 | BC559 | 2SC4512



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