All Transistors. BFG325W Datasheet

 

BFG325W Datasheet and Replacement


   Type Designator: BFG325W
   SMD Transistor Code: A8*
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.21 W
   Maximum Collector-Base Voltage |Vcb|: 15 V
   Maximum Collector-Emitter Voltage |Vce|: 6 V
   Maximum Emitter-Base Voltage |Veb|: 2 V
   Maximum Collector Current |Ic max|: 0.035 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 14000 MHz
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: CMPAK
 

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BFG325W Datasheet (PDF)

 ..1. Size:86K  philips
 bfg325w xr.pdf pdf_icon

BFG325W

BFG325W/XRNPN 14 GHz wideband transistorRev. 01 2 February 2005 Product data sheet1. Product profile1.1 General descriptionNPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package.1.2 Features High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability1.3 Applications Intended for Radio Fr

 8.1. Size:79K  philips
 bfg325 xr.pdf pdf_icon

BFG325W

BFG325/XRNPN 14 GHz wideband transistorRev. 01 2 February 2005 Product data sheet1. Product profile1.1 General descriptionNPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143R plastic package.1.2 Features High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability1.3 Applications Intended for Radio Fre

Datasheet: BF820W , BF824W , BFG10W , BFG25A , BFG25AW , BFG310 , BFG310W , BFG325 , 2N5401 , BFG410W , BFG424F , BFG424W , BFG540 , BFG540W , BFG541 , BFQ540 , BFQ591 .

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