BFG325W Datasheet, Equivalent, Cross Reference Search
Type Designator: BFG325W
SMD Transistor Code: A8*
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.21 W
Maximum Collector-Base Voltage |Vcb|: 15 V
Maximum Collector-Emitter Voltage |Vce|: 6 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 0.035 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 14000 MHz
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: CMPAK
BFG325W Transistor Equivalent Substitute - Cross-Reference Search
BFG325W Datasheet (PDF)
bfg325w xr.pdf
BFG325W/XRNPN 14 GHz wideband transistorRev. 01 2 February 2005 Product data sheet1. Product profile1.1 General descriptionNPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package.1.2 Features High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability1.3 Applications Intended for Radio Fr
bfg325 xr.pdf
BFG325/XRNPN 14 GHz wideband transistorRev. 01 2 February 2005 Product data sheet1. Product profile1.1 General descriptionNPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143R plastic package.1.2 Features High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability1.3 Applications Intended for Radio Fre
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
