BFG410W Datasheet. Specs and Replacement

Type Designator: BFG410W  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.054 W

Maximum Collector-Base Voltage |Vcb|: 10 V

Maximum Collector-Emitter Voltage |Vce|: 4.5 V

Maximum Emitter-Base Voltage |Veb|: 1 V

Maximum Collector Current |Ic max|: 0.012 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 22000 MHz

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: -

Package: CMPAK

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BFG410W datasheet

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BFG410W

DISCRETE SEMICONDUCTORS DATA SHEET BFG410W NPN 22 GHz wideband transistor Product specification 1998 Mar 11 Supersedes data of 1997 Oct 29 NXP Semiconductors Product specification NPN 22 GHz wideband transistor BFG410W FEATURES PINNING Very high power gain PIN DESCRIPTION Low noise figure 1emitter High transition frequency 2 base Emitter is thermal lead 3emitt... See More ⇒

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BFG410W

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Detailed specifications: BF824W, BFG10W, BFG25A, BFG25AW, BFG310, BFG310W, BFG325, BFG325W, C1815, BFG424F, BFG424W, BFG540, BFG540W, BFG541, BFQ540, BFQ591, BFR505

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