All Transistors. BFG410W Datasheet

 

BFG410W Datasheet and Replacement


   Type Designator: BFG410W
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.054 W
   Maximum Collector-Base Voltage |Vcb|: 10 V
   Maximum Collector-Emitter Voltage |Vce|: 4.5 V
   Maximum Emitter-Base Voltage |Veb|: 1 V
   Maximum Collector Current |Ic max|: 0.012 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 22000 MHz
   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
   Package: CMPAK
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BFG410W Datasheet (PDF)

 ..1. Size:371K  philips
 bfg410w.pdf pdf_icon

BFG410W

DISCRETE SEMICONDUCTORS DATA SHEETBFG410WNPN 22 GHz wideband transistorProduct specification 1998 Mar 11Supersedes data of 1997 Oct 29NXP Semiconductors Product specificationNPN 22 GHz wideband transistor BFG410WFEATURES PINNING Very high power gainPIN DESCRIPTION Low noise figure1emitter High transition frequency2 base Emitter is thermal lead3emitt

 ..2. Size:85K  philips
 bfg410w 4.pdf pdf_icon

BFG410W

DISCRETE SEMICONDUCTORSBFG410WNPN 22 GHz wideband transistorProduct specification 1998 Mar 11Supersedes data of 1997 Oct 29File under Discrete Semiconductors, SC14Philips Semiconductors Product specificationNPN 22 GHz wideband transistor BFG410WFEATURES PINNING Very high power gainPIN DESCRIPTION Low noise figure1 emitter High transition frequency2 base

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: HSE901 | 2SC1353 | DTD114E | UNR221L | ZX5T853G | AM82223-010 | CMLT4413

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