BFG410W Datasheet, Equivalent, Cross Reference Search
Type Designator: BFG410W
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.054 W
Maximum Collector-Base Voltage |Vcb|: 10 V
Maximum Collector-Emitter Voltage |Vce|: 4.5 V
Maximum Emitter-Base Voltage |Veb|: 1 V
Maximum Collector Current |Ic max|: 0.012 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 22000 MHz
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: CMPAK
BFG410W Transistor Equivalent Substitute - Cross-Reference Search
BFG410W Datasheet (PDF)
bfg410w.pdf
DISCRETE SEMICONDUCTORS DATA SHEETBFG410WNPN 22 GHz wideband transistorProduct specification 1998 Mar 11Supersedes data of 1997 Oct 29NXP Semiconductors Product specificationNPN 22 GHz wideband transistor BFG410WFEATURES PINNING Very high power gainPIN DESCRIPTION Low noise figure1emitter High transition frequency2 base Emitter is thermal lead3emitt
bfg410w 4.pdf
DISCRETE SEMICONDUCTORSBFG410WNPN 22 GHz wideband transistorProduct specification 1998 Mar 11Supersedes data of 1997 Oct 29File under Discrete Semiconductors, SC14Philips Semiconductors Product specificationNPN 22 GHz wideband transistor BFG410WFEATURES PINNING Very high power gainPIN DESCRIPTION Low noise figure1 emitter High transition frequency2 base
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
