All Transistors. BFU610F Datasheet

 

BFU610F Datasheet and Replacement


   Type Designator: BFU610F
   SMD Transistor Code: D1*
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.136 W
   Maximum Collector-Base Voltage |Vcb|: 16 V
   Maximum Collector-Emitter Voltage |Vce|: 5.5 V
   Maximum Emitter-Base Voltage |Veb|: 2.5 V
   Maximum Collector Current |Ic max|: 0.01 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 15000 MHz
   Forward Current Transfer Ratio (hFE), MIN: 90
   Noise Figure, dB: -
   Package: SOT343F
 

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BFU610F Datasheet (PDF)

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BFU610F

BFU610FNPN wideband silicon RF transistorRev. 2 11 January 2011 Product data sheet1. Product profile1.1 General descriptionNPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.CAUTIONThis device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices.

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2SD1047 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

History: BFV66A | AM82325-050

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