BFU660F Datasheet. Specs and Replacement

Type Designator: BFU660F  📄📄 

SMD Transistor Code: D3*

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.225 W

Maximum Collector-Base Voltage |Vcb|: 16 V

Maximum Collector-Emitter Voltage |Vce|: 5.5 V

Maximum Emitter-Base Voltage |Veb|: 2.5 V

Maximum Collector Current |Ic max|: 0.06 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 21000 MHz

Forward Current Transfer Ratio (hFE), MIN: 90

Noise Figure, dB: -

Package: SOT343F

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BFU660F datasheet

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BFU660F

BFU660F NPN wideband silicon RF transistor Rev. 1 11 January 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices.... See More ⇒

Detailed specifications: BFR94A, BFR94AW, BFS20W, BFS505, BFT25A, BFT93W, BFU610F, BFU630F, 2N2222A, BFU690F, BFU710F, BFU725F, BFU730F, BFU760F, BFU790F, BUJ100, BUJ100LR

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