All Transistors. BFU660F Datasheet

 

BFU660F Datasheet and Replacement


   Type Designator: BFU660F
   SMD Transistor Code: D3*
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.225 W
   Maximum Collector-Base Voltage |Vcb|: 16 V
   Maximum Collector-Emitter Voltage |Vce|: 5.5 V
   Maximum Emitter-Base Voltage |Veb|: 2.5 V
   Maximum Collector Current |Ic max|: 0.06 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 21000 MHz
   Forward Current Transfer Ratio (hFE), MIN: 90
   Noise Figure, dB: -
   Package: SOT343F
 

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BFU660F Datasheet (PDF)

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BFU660F

BFU660FNPN wideband silicon RF transistorRev. 1 11 January 2011 Product data sheet1. Product profile1.1 General descriptionNPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.CAUTIONThis device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices.

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: BFW38 | BFW70 | BFX34T

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