BFU710F Datasheet, Equivalent, Cross Reference Search
Type Designator: BFU710F
SMD Transistor Code: D5*
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.136 W
Maximum Collector-Base Voltage |Vcb|: 10 V
Maximum Collector-Emitter Voltage |Vce|: 2.8 V
Maximum Emitter-Base Voltage |Veb|: 1 V
Maximum Collector Current |Ic max|: 0.01 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 43000 MHz
Forward Current Transfer Ratio (hFE), MIN: 200
Noise Figure, dB: -
Package: SOT343F
BFU710F Transistor Equivalent Substitute - Cross-Reference Search
BFU710F Datasheet (PDF)
bfu710f.pdf
BFU710FNPN wideband silicon germanium RF transistorRev. 1 20 April 2011 Product data sheet1. Product profile1.1 General descriptionNPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.CAUTIONThis device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic
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