All Transistors. BFU710F Datasheet

 

BFU710F Datasheet and Replacement


   Type Designator: BFU710F
   SMD Transistor Code: D5*
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.136 W
   Maximum Collector-Base Voltage |Vcb|: 10 V
   Maximum Collector-Emitter Voltage |Vce|: 2.8 V
   Maximum Emitter-Base Voltage |Veb|: 1 V
   Maximum Collector Current |Ic max|: 0.01 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 43000 MHz
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: SOT343F
 

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BFU710F Datasheet (PDF)

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BFU710F

BFU710FNPN wideband silicon germanium RF transistorRev. 1 20 April 2011 Product data sheet1. Product profile1.1 General descriptionNPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.CAUTIONThis device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic

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