BFU710F Datasheet. Specs and Replacement

Type Designator: BFU710F  📄📄 

SMD Transistor Code: D5*

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.136 W

Maximum Collector-Base Voltage |Vcb|: 10 V

Maximum Collector-Emitter Voltage |Vce|: 2.8 V

Maximum Emitter-Base Voltage |Veb|: 1 V

Maximum Collector Current |Ic max|: 0.01 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 43000 MHz

Forward Current Transfer Ratio (hFE), MIN: 200

Noise Figure, dB: -

Package: SOT343F

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BFU710F datasheet

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BFU710F

BFU710F NPN wideband silicon germanium RF transistor Rev. 1 20 April 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic ... See More ⇒

Detailed specifications: BFS20W, BFS505, BFT25A, BFT93W, BFU610F, BFU630F, BFU660F, BFU690F, 13003, BFU725F, BFU730F, BFU760F, BFU790F, BUJ100, BUJ100LR, BUJ103A, BUJ103AD

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