BFU725F
Datasheet, Equivalent, Cross Reference Search
Type Designator: BFU725F
SMD Transistor Code: B7*
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.136
W
Maximum Collector-Base Voltage |Vcb|: 10
V
Maximum Collector-Emitter Voltage |Vce|: 2.8
V
Maximum Emitter-Base Voltage |Veb|: 0.55
V
Maximum Collector Current |Ic max|: 0.04
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 55000
MHz
Forward Current Transfer Ratio (hFE), MIN: 160
Noise Figure, dB: -
Package: SOT343F
BFU725F
Transistor Equivalent Substitute - Cross-Reference Search
BFU725F
Datasheet (PDF)
..1. Size:73K philips
bfu725f n1.pdf
BFU725F/N1NPN wideband silicon germanium RF transistorRev. 01 13 July 2009 Product data sheet1. Product profile1.1 General descriptionNPN silicon germanium microwave transistor for high speed, low noise applications in aplastic, 4-pin dual-emitter SOT343F package.CAUTIONThis device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handlingelectrostatic
0.1. Size:136K nxp
bfu725f-n1.pdf
BFU725F/N1NPN wideband silicon germanium RF transistorRev. 2 3 November 2011 Product data sheet1. Product profile1.1 General descriptionNPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.CAUTIONThis device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrost
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