BFU725F Datasheet. Specs and Replacement

Type Designator: BFU725F  📄📄 

SMD Transistor Code: B7*

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.136 W

Maximum Collector-Base Voltage |Vcb|: 10 V

Maximum Collector-Emitter Voltage |Vce|: 2.8 V

Maximum Emitter-Base Voltage |Veb|: 0.55 V

Maximum Collector Current |Ic max|: 0.04 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 55000 MHz

Forward Current Transfer Ratio (hFE), MIN: 160

Noise Figure, dB: -

Package: SOT343F

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BFU725F datasheet

 ..1. Size:73K  philips

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BFU725F

BFU725F/N1 NPN wideband silicon germanium RF transistor Rev. 01 13 July 2009 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic... See More ⇒

 0.1. Size:136K  nxp

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BFU725F

BFU725F/N1 NPN wideband silicon germanium RF transistor Rev. 2 3 November 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrost... See More ⇒

Detailed specifications: BFS505, BFT25A, BFT93W, BFU610F, BFU630F, BFU660F, BFU690F, BFU710F, 2SD1047, BFU730F, BFU760F, BFU790F, BUJ100, BUJ100LR, BUJ103A, BUJ103AD, BUJ103AX

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