All Transistors. BFU725F Datasheet

 

BFU725F Datasheet and Replacement


   Type Designator: BFU725F
   SMD Transistor Code: B7*
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.136 W
   Maximum Collector-Base Voltage |Vcb|: 10 V
   Maximum Collector-Emitter Voltage |Vce|: 2.8 V
   Maximum Emitter-Base Voltage |Veb|: 0.55 V
   Maximum Collector Current |Ic max|: 0.04 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 55000 MHz
   Forward Current Transfer Ratio (hFE), MIN: 160
   Noise Figure, dB: -
   Package: SOT343F
 

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BFU725F Datasheet (PDF)

 ..1. Size:73K  philips
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BFU725F

BFU725F/N1NPN wideband silicon germanium RF transistorRev. 01 13 July 2009 Product data sheet1. Product profile1.1 General descriptionNPN silicon germanium microwave transistor for high speed, low noise applications in aplastic, 4-pin dual-emitter SOT343F package.CAUTIONThis device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handlingelectrostatic

 0.1. Size:136K  nxp
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BFU725F

BFU725F/N1NPN wideband silicon germanium RF transistorRev. 2 3 November 2011 Product data sheet1. Product profile1.1 General descriptionNPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.CAUTIONThis device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrost

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: BFV38 | BFV79N

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