BFU730F Datasheet. Specs and Replacement

Type Designator: BFU730F  📄📄 

SMD Transistor Code: D6*

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.197 W

Maximum Collector-Base Voltage |Vcb|: 10 V

Maximum Collector-Emitter Voltage |Vce|: 2.8 V

Maximum Emitter-Base Voltage |Veb|: 1 V

Maximum Collector Current |Ic max|: 0.03 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 55000 MHz

Forward Current Transfer Ratio (hFE), MIN: 205

Noise Figure, dB: -

Package: SOT343F

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BFU730F datasheet

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BFU730F

BFU730F NPN wideband silicon germanium RF transistor Rev. 1 29 April 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic ... See More ⇒

 8.1. Size:165K  nxp

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BFU730F

BFU730LX NPN wideband silicon germanium RF transistor Rev. 1 8 May 2013 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a SOT883C leadless ultra small plastic SMD package. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostat... See More ⇒

Detailed specifications: BFT25A, BFT93W, BFU610F, BFU630F, BFU660F, BFU690F, BFU710F, BFU725F, 2SC2073, BFU760F, BFU790F, BUJ100, BUJ100LR, BUJ103A, BUJ103AD, BUJ103AX, BUJ105A

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