BFU730F
Datasheet, Equivalent, Cross Reference Search
Type Designator: BFU730F
SMD Transistor Code: D6*
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.197
W
Maximum Collector-Base Voltage |Vcb|: 10
V
Maximum Collector-Emitter Voltage |Vce|: 2.8
V
Maximum Emitter-Base Voltage |Veb|: 1
V
Maximum Collector Current |Ic max|: 0.03
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 55000
MHz
Forward Current Transfer Ratio (hFE), MIN: 205
Noise Figure, dB: -
Package: SOT343F
BFU730F
Transistor Equivalent Substitute - Cross-Reference Search
BFU730F
Datasheet (PDF)
..1. Size:128K nxp
bfu730f.pdf
BFU730FNPN wideband silicon germanium RF transistorRev. 1 29 April 2011 Product data sheet1. Product profile1.1 General descriptionNPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.CAUTIONThis device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic
8.1. Size:165K nxp
bfu730lx.pdf
BFU730LXNPN wideband silicon germanium RF transistorRev. 1 8 May 2013 Product data sheet1. Product profile1.1 General descriptionNPN silicon germanium microwave transistor for high speed, low noise applications in a SOT883C leadless ultra small plastic SMD package.CAUTIONThis device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostat
Datasheet: 2N3200
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