All Transistors. MZ0912B100Y Datasheet

 

MZ0912B100Y Datasheet and Replacement


   Type Designator: MZ0912B100Y
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 290 W
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Collector Current |Ic max|: 6 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 1250 MHz
   Forward Current Transfer Ratio (hFE), MIN: 5
   Noise Figure, dB: -
   Package: SOT443A
 

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MZ0912B100Y Datasheet (PDF)

 ..1. Size:81K  philips
 mx0912b100y mz0912b100y.pdf pdf_icon

MZ0912B100Y

DISCRETE SEMICONDUCTORSDATA SHEETMX0912B100Y; MZ0912B100YNPN microwave power transistors1997 Feb 20Product specificationSupersedes data of June 1992Philips Semiconductors Product specificationNPN microwave power transistors MX0912B100Y; MZ0912B100YFEATURES PINNING Interdigitated structure provides high emitter efficiencyPIN DESCRIPTION Diffused emitter ballasting

 7.1. Size:75K  philips
 mz0912b50y 2.pdf pdf_icon

MZ0912B100Y

DISCRETE SEMICONDUCTORSDATA SHEETMZ0912B50YNPN microwave power transistor1997 Feb 18Product specificationSupersedes data of November 1994Philips Semiconductors Product specificationNPN microwave power transistor MZ0912B50YFEATURES QUICK REFERENCE DATAMicrowave performance up to Tmb =25C in a common base class C Interdigitated structure providesbroadband amplifier.

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: MX0912B100Y | MUN5314DW1

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