MZ0912B100Y Datasheet, Equivalent, Cross Reference Search
Type Designator: MZ0912B100Y
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 290 W
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 6 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 1250 MHz
Forward Current Transfer Ratio (hFE), MIN: 5
Noise Figure, dB: -
Package: SOT443A
MZ0912B100Y Transistor Equivalent Substitute - Cross-Reference Search
MZ0912B100Y Datasheet (PDF)
mx0912b100y mz0912b100y.pdf
DISCRETE SEMICONDUCTORSDATA SHEETMX0912B100Y; MZ0912B100YNPN microwave power transistors1997 Feb 20Product specificationSupersedes data of June 1992Philips Semiconductors Product specificationNPN microwave power transistors MX0912B100Y; MZ0912B100YFEATURES PINNING Interdigitated structure provides high emitter efficiencyPIN DESCRIPTION Diffused emitter ballasting
mz0912b50y 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETMZ0912B50YNPN microwave power transistor1997 Feb 18Product specificationSupersedes data of November 1994Philips Semiconductors Product specificationNPN microwave power transistor MZ0912B50YFEATURES QUICK REFERENCE DATAMicrowave performance up to Tmb =25C in a common base class C Interdigitated structure providesbroadband amplifier.
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
