MZ0912B100Y Datasheet. Specs and Replacement

Type Designator: MZ0912B100Y  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 290 W

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Collector Current |Ic max|: 6 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 1250 MHz

Forward Current Transfer Ratio (hFE), MIN: 5

Noise Figure, dB: -

Package: SOT443A

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MZ0912B100Y datasheet

 ..1. Size:81K  philips

 mx0912b100y mz0912b100y.pdf pdf_icon

MZ0912B100Y

DISCRETE SEMICONDUCTORS DATA SHEET MX0912B100Y; MZ0912B100Y NPN microwave power transistors 1997 Feb 20 Product specification Supersedes data of June 1992 Philips Semiconductors Product specification NPN microwave power transistors MX0912B100Y; MZ0912B100Y FEATURES PINNING Interdigitated structure provides high emitter efficiency PIN DESCRIPTION Diffused emitter ballasting ... See More ⇒

 7.1. Size:75K  philips

 mz0912b50y 2.pdf pdf_icon

MZ0912B100Y

DISCRETE SEMICONDUCTORS DATA SHEET MZ0912B50Y NPN microwave power transistor 1997 Feb 18 Product specification Supersedes data of November 1994 Philips Semiconductors Product specification NPN microwave power transistor MZ0912B50Y FEATURES QUICK REFERENCE DATA Microwave performance up to Tmb =25 C in a common base class C Interdigitated structure provides broadband amplifier. ... See More ⇒

Detailed specifications: BUJD103AD, BUJD105AD, BUJD203A, BUJD203AD, BUJD203AX, BUT11APX-1200, MX0912B251Y, MX0912B351Y, 2SB817, MZ0912B50Y, 3CA649, 3CA649A, 3CA683, 3CA684, 3CA688, 3CA750, 3CA753

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