All Transistors. MZ0912B50Y Datasheet

 

MZ0912B50Y Datasheet, Equivalent, Cross Reference Search

Type Designator: MZ0912B50Y

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 150 W

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 200 °C

Transition Frequency (ft): 1250 MHz

Forward Current Transfer Ratio (hFE), MIN: 5

Noise Figure, dB: -

Package: SOT443A

MZ0912B50Y Transistor Equivalent Substitute - Cross-Reference Search

 

MZ0912B50Y Datasheet (PDF)

1.1. mz0912b50y 2.pdf Size:75K _philips

MZ0912B50Y
MZ0912B50Y

DISCRETE SEMICONDUCTORS DATA SHEET MZ0912B50Y NPN microwave power transistor 1997 Feb 18 Product specification Supersedes data of November 1994 Philips Semiconductors Product specification NPN microwave power transistor MZ0912B50Y FEATURES QUICK REFERENCE DATA Microwave performance up to Tmb =25C in a common base class C Interdigitated structure provides broadband amplifier. high

3.1. mx0912b100y mz0912b100y.pdf Size:81K _philips

MZ0912B50Y
MZ0912B50Y

DISCRETE SEMICONDUCTORS DATA SHEET MX0912B100Y; MZ0912B100Y NPN microwave power transistors 1997 Feb 20 Product specification Supersedes data of June 1992 Philips Semiconductors Product specification NPN microwave power transistors MX0912B100Y; MZ0912B100Y FEATURES PINNING Interdigitated structure provides high emitter efficiency PIN DESCRIPTION Diffused emitter ballasting resisto

Datasheet: BUJD105AD , BUJD203A , BUJD203AD , BUJD203AX , BUT11APX-1200 , MX0912B251Y , MX0912B351Y , MZ0912B100Y , BF494 , 3CA649 , 3CA649A , 3CA683 , 3CA684 , 3CA688 , 3CA750 , 3CA753 , 3CA772 .

 


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