3CA649 Specs and Replacement

Type Designator: 3CA649

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 20 W

Maximum Collector-Base Voltage |Vcb|: 180 V

Maximum Collector-Emitter Voltage |Vce|: 120 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 140 MHz

Collector Capacitance (Cc): 27 pF

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO126F TO225F

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3CA649 datasheet

 0.1. Size:380K  lzg

 2sb649-a 3ca649-a.pdf pdf_icon

3CA649

2SB649(3CA649) 2SB649A(3CA649A) PNP /SILICON PNP TRANSISTOR /Purpose Low frequency power amplifier. 2SD669(3DA669)/2SD669A(3DA669A) Features Complementary pair with 2SD669(3DA669)/2SD669A(3DA669A). /Absolute Maximum Ratings(Ta=25 ) Symbol Rating Unit V -180 V CBO... See More ⇒

Detailed specifications: BUJD203A, BUJD203AD, BUJD203AX, BUT11APX-1200, MX0912B251Y, MX0912B351Y, MZ0912B100Y, MZ0912B50Y, 2SC2655, 3CA649A, 3CA683, 3CA684, 3CA688, 3CA750, 3CA753, 3CA772, 3CA772B

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