3CA649A Datasheet, Equivalent, Cross Reference Search
Type Designator: 3CA649A
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 180 V
Maximum Collector-Emitter Voltage |Vce|: 160 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 140 MHz
Collector Capacitance (Cc): 27 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO126F TO225F
3CA649A Transistor Equivalent Substitute - Cross-Reference Search
3CA649A Datasheet (PDF)
8.1. Size:380K lzg
2sb649-a 3ca649-a.pdf
2sb649-a 3ca649-a.pdf
2SB649(3CA649) 2SB649A(3CA649A) PNP /SILICON PNP TRANSISTOR :/Purpose: Low frequency power amplifier. : 2SD669(3DA669)/2SD669A(3DA669A) Features: Complementary pair with 2SD669(3DA669)/2SD669A(3DA669A). /Absolute Maximum Ratings(Ta=25) Symbol Rating Unit V -180 V CBO
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
