PBRN113ET Datasheet, Equivalent, Cross Reference Search
Type Designator: PBRN113ET
SMD Transistor Code: 7G_p7G_t7G_W7G
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 1 kOhm
Built in Bias Resistor R2 = 1 kOhm
Typical Resistor Ratio R1/R2 = 1
Maximum Collector Power Dissipation (Pc): 0.25
W
Maximum Collector-Base Voltage |Vcb|: 40
V
Maximum Collector-Emitter Voltage |Vce|: 40
V
Maximum Emitter-Base Voltage |Veb|: 10
V
Maximum Collector Current |Ic max|: 0.8
A
Max. Operating Junction Temperature (Tj): 150
°C
Collector Capacitance (Cc): 7
pF
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: SOT23
PBRN113ET Transistor Equivalent Substitute - Cross-Reference Search
PBRN113ET Datasheet (PDF)
pbrn113es pbrn113e pbrn113ek.pdf
PBRN113E seriesNPN 800 mA, 40 V BISS RETs; R1 = 1 k, R2 = 1 kRev. 01 1 March 2007 Product data sheet1. Product profile1.1 General description800 mA NPN low VCEsat Breakthrough In Small Signal (BISS) Resistor-EquippedTransistors (RET) family in small plastic packages.Table 1. Product overviewType number PackageNXP JEITA JEDECPBRN113EK SOT346 SC-59A TO-236PBRN113ES
pbrn113e.pdf
PBRN113E seriesNPN 800 mA, 40 V BISS RETs; R1 = 1 k, R2 = 1 kRev. 01 1 March 2007 Product data sheet1. Product profile1.1 General description800 mA NPN low VCEsat Breakthrough In Small Signal (BISS) Resistor-EquippedTransistors (RET) family in small plastic packages.Table 1. Product overviewType number PackageNXP JEITA JEDECPBRN113EK SOT346 SC-59A TO-236PBRN113ES
pbrn113z.pdf
PBRN113Z seriesNPN 800 mA, 40 V BISS RETs; R1 = 1 k, R2 = 10 kRev. 01 26 February 2007 Product data sheet1. Product profile1.1 General description800 mA NPN low VCEsat Breakthrough In Small Signal (BISS) Resistor-EquippedTransistors (RET) family in small plastic packages.Table 1. Product overviewType number PackageNXP JEITA JEDECPBRN113ZK SOT346 SC-59A TO-236PBRN
pbrn113zs pbrn113z pbrn113zk.pdf
PBRN113Z seriesNPN 800 mA, 40 V BISS RETs; R1 = 1 k, R2 = 10 kRev. 01 26 February 2007 Product data sheet1. Product profile1.1 General description800 mA NPN low VCEsat Breakthrough In Small Signal (BISS) Resistor-EquippedTransistors (RET) family in small plastic packages.Table 1. Product overviewType number PackageNXP JEITA JEDECPBRN113ZK SOT346 SC-59A TO-236PBRN
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D882P , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
