All Transistors. PBRP123ET Datasheet

 

PBRP123ET Datasheet and Replacement


   Type Designator: PBRP123ET
   SMD Transistor Code: *7H_-7H_p7H_t7H_W7H
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 2.2 kOhm
   Built in Bias Resistor R2 = 2.2 kOhm
   Typical Resistor Ratio R1/R2 = 1
   Maximum Collector Power Dissipation (Pc): 0.25 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 0.8 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Collector Capacitance (Cc): 11 pF
   Forward Current Transfer Ratio (hFE), MIN: 70
   Noise Figure, dB: -
   Package: SOT23
 

 PBRP123ET Substitution

   - BJT ⓘ Cross-Reference Search

   

PBRP123ET Datasheet (PDF)

 ..1. Size:112K  philips
 pbrp123et.pdf pdf_icon

PBRP123ET

PBRP123ETPNP 800 mA, 40 V BISS RET; R1 = 2.2 k, R2 = 2.2 kRev. 01 16 January 2008 Product data sheet1. Product profile1.1 General description800 mA PNP low VCEsat Breakthrough In Small Signal (BISS) Resistor-EquippedTransistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plasticpackage.NPN complement: PBRN123ET.1.2 Features 800 mA repetitive peak

 7.1. Size:114K  philips
 pbrp123yt.pdf pdf_icon

PBRP123ET

PBRP123YTPNP 800 mA, 40 V BISS RET; R1 = 2.2 k, R2 = 10 kRev. 01 17 December 2007 Product data sheet1. Product profile1.1 General description800 mA PNP low VCEsat Breakthrough In Small Signal (BISS) Resistor-EquippedTransistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plasticpackage.NPN complement: PBRN123YT.1.2 Features 800 mA repetitive peak

 9.1. Size:115K  philips
 pbrp113zt.pdf pdf_icon

PBRP123ET

PBRP113ZTPNP 800 mA, 40 V BISS RET; R1 = 1 k, R2 = 10 kRev. 01 16 January 2008 Product data sheet1. Product profile1.1 General description800 mA PNP low VCEsat Breakthrough In Small Signal (BISS) Resistor-EquippedTransistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plasticpackage.NPN complement: PBRN113ZT.1.2 Features 800 mA repetitive peak out

 9.2. Size:104K  nxp
 pbrp113e.pdf pdf_icon

PBRP123ET

PBRP113ETPNP 800 mA, 40 V BISS RET; R1 = 1 k, R2 = 1 kRev. 01 17 December 2007 Product data sheet1. Product profile1.1 General description800 mA PNP low VCEsat Breakthrough In Small Signal (BISS) Resistor-EquippedTransistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plasticpackage.NPN complement: PBRN113ET.1.2 Features 800 mA repetitive peak out

SHOW MORE

Datasheet: PBR941B , PBR951 , PBRN113ET , PBRN113ZT , PBRN123ET , PBRN123YT , PBRP113ET , PBRP113ZT , 9014 , PBRP123YT , PBSS2515E , PBSS2515M , PBSS2515VPN , PBSS2515VS , PBSS2515YPN , PBSS2540E , PBSS2540M .

History: GET538 | KSA1381C | 2N579 | 2SC1271A | SRC1201EF | FTC1318 | 2SD2176

Keywords - PBRP123ET transistor datasheet

 PBRP123ET cross reference
 PBRP123ET equivalent finder
 PBRP123ET lookup
 PBRP123ET substitution
 PBRP123ET replacement

 

 
Back to Top

 


 
.