All Transistors. PBSS302ND Datasheet

 

PBSS302ND Datasheet and Replacement


   Type Designator: PBSS302ND
   SMD Transistor Code: C7
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 2.5 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 4 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 150 MHz
   Collector Capacitance (Cc): 30 pF
   Forward Current Transfer Ratio (hFE), MIN: 300
   Noise Figure, dB: -
   Package: SOT457 SC74
 

 PBSS302ND Substitution

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PBSS302ND Datasheet (PDF)

 ..1. Size:136K  philips
pbss302nd.pdf pdf_icon

PBSS302ND

PBSS302ND40 V, 4 A NPN low VCEsat (BISS) transistorRev. 02 18 February 2008 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74)small Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS302PD.1.2 Features Ultra low collector-emitter saturation voltage VCEsat 4 A continuou

 ..2. Size:126K  nxp
pbss302nd.pdf pdf_icon

PBSS302ND

PBSS302ND40 V, 4 A NPN low VCEsat (BISS) transistorRev. 02 18 February 2008 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74)small Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS302PD.1.2 Features Ultra low collector-emitter saturation voltage VCEsat 4 A continuou

 6.1. Size:164K  philips
pbss302nz.pdf pdf_icon

PBSS302ND

PBSS302NZ20 V, 5.8 A NPN low VCEsat (BISS) transistorRev. 02 20 November 2009 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS302PZ.1.2 Features Low collector-emitter saturation voltage VCEsat High collector c

 6.2. Size:188K  philips
pbss302nx.pdf pdf_icon

PBSS302ND

PBSS302NX20 V, 5.3 A NPN low VCEsat (BISS) transistorRev. 02 20 November 2009 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS302PX.1.2 Features Low collector-emitter saturation voltage VCEsa

Datasheet: PBSS2540E , PBSS2540M , PBSS301ND , PBSS301NX , PBSS301NZ , PBSS301PD , PBSS301PX , PBSS301PZ , 8550 , PBSS302NX , PBSS302NZ , PBSS302PD , PBSS302PX , PBSS302PZ , PBSS303ND , PBSS303NX , PBSS303NZ .

History: SGSF461 | ET708 | MJD127-1 | LDTC143XET1G | SGSF463 | BTC3097T3 | 2SC1410A

Keywords - PBSS302ND transistor datasheet

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