PBSS302ND Datasheet. Specs and Replacement

Type Designator: PBSS302ND  📄📄 

SMD Transistor Code: C7

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 2.5 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 40 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 4 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 150 MHz

Collector Capacitance (Cc): 30 pF

Forward Current Transfer Ratio (hFE), MIN: 300

Noise Figure, dB: -

Package: SOT457 SC74

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PBSS302ND datasheet

 ..1. Size:136K  philips

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PBSS302ND

PBSS302ND 40 V, 4 A NPN low VCEsat (BISS) transistor Rev. 02 18 February 2008 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. PNP complement PBSS302PD. 1.2 Features Ultra low collector-emitter saturation voltage VCEsat 4 A continuou... See More ⇒

 ..2. Size:126K  nxp

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PBSS302ND

PBSS302ND 40 V, 4 A NPN low VCEsat (BISS) transistor Rev. 02 18 February 2008 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. PNP complement PBSS302PD. 1.2 Features Ultra low collector-emitter saturation voltage VCEsat 4 A continuou... See More ⇒

 6.1. Size:164K  philips

 pbss302nz.pdf pdf_icon

PBSS302ND

PBSS302NZ 20 V, 5.8 A NPN low VCEsat (BISS) transistor Rev. 02 20 November 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. PNP complement PBSS302PZ. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector c... See More ⇒

 6.2. Size:188K  philips

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PBSS302ND

PBSS302NX 20 V, 5.3 A NPN low VCEsat (BISS) transistor Rev. 02 20 November 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package. PNP complement PBSS302PX. 1.2 Features Low collector-emitter saturation voltage VCEsa... See More ⇒

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Detailed specifications: PBSS2540E, PBSS2540M, PBSS301ND, PBSS301NX, PBSS301NZ, PBSS301PD, PBSS301PX, PBSS301PZ, 2SC2655, PBSS302NX, PBSS302NZ, PBSS302PD, PBSS302PX, PBSS302PZ, PBSS303ND, PBSS303NX, PBSS303NZ

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