All Transistors. PBSS304PX Datasheet

 

PBSS304PX Datasheet, Equivalent, Cross Reference Search


   Type Designator: PBSS304PX
   SMD Transistor Code: *5L
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 2.1 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 4.2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 130 MHz
   Collector Capacitance (Cc): 90 pF
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: SOT89

 PBSS304PX Transistor Equivalent Substitute - Cross-Reference Search

   

PBSS304PX Datasheet (PDF)

 ..1. Size:198K  nxp
pbss304px.pdf

PBSS304PX
PBSS304PX

PBSS304PX60 V, 4.2 A PNP low VCEsat (BISS) transistorRev. 02 8 December 2009 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS304NX.1.2 Features Low collector-emitter saturation voltage VCEsat

 ..2. Size:1225K  slkor
pbss304px.pdf

PBSS304PX
PBSS304PX

PBSS304PX60V PNP LOW SATURATION MEDIUM POWER TRANSISTORSOT89 Features BVCEO > -60V E IC = -4.3A high continuous current RSAT = 32m for a low equivalent On-Resistance C Low saturation voltage VCE(sat)

 6.1. Size:129K  philips
pbss304pd.pdf

PBSS304PX
PBSS304PX

PBSS304PD80 V, 3 A PNP low VCEsat (BISS) transistorRev. 02 24 March 2009 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74)small Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS304ND.1.2 Features Low collector-emitter saturation voltage VCEsat High collector current

 6.2. Size:122K  nxp
pbss304pd.pdf

PBSS304PX
PBSS304PX

PBSS304PD80 V, 3 A PNP low VCEsat (BISS) transistorRev. 02 24 March 2009 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74)small Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS304ND.1.2 Features Low collector-emitter saturation voltage VCEsat High collector current

 6.3. Size:173K  nxp
pbss304pz.pdf

PBSS304PX
PBSS304PX

PBSS304PZ60 V, 4.5 A PNP low VCEsat (BISS) transistorRev. 02 8 December 2009 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS304NZ.1.2 Features Low collector-emitter saturation voltage VCEsat High collector cu

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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