PBSS4041PT Datasheet, Equivalent, Cross Reference Search

   Type Designator: PBSS4041PT
   SMD Transistor Code: *BL
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 2.7 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 150 MHz
   Collector Capacitance (Cc): 38 pF
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: SOT23

PBSS4041PT Transistor Equivalent Substitute - Cross-Reference Search

PBSS4041PT Datasheet (PDF)

..1. Size:182K philips
pbss4041pt.pdf

PBSS4041PT60 V, 2.7 A PNP low VCEsat (BISS) transistorRev. 02 9 March 2010 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS4041NT.1.2 Features and benefits Very low collector-emitter saturation voltage VCEsat

5.1. Size:181K philips
pbss4041pz.pdf

PBSS4041PZ60 V, 5.7 A PNP low VCEsat (BISS) transistorRev. 01 31 March 2010 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS4041NZ.1.2 Features and benefits Very low collector-emitter saturation voltage V

5.2. Size:192K philips
pbss4041px.pdf

PBSS4041PX60 V, 5 A PNP low VCEsat (BISS) transistorRev. 01 1 April 2010 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS4041NX.1.2 Features and benefits Very low collector-emitter saturation

5.3. Size:181K nxp
pbss4041pz.pdf