All Transistors. PBSS4160U Datasheet

 

PBSS4160U Datasheet and Replacement


   Type Designator: PBSS4160U
   SMD Transistor Code: 52*
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.415 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 150 MHz
   Collector Capacitance (Cc): 10 pF
   Forward Current Transfer Ratio (hFE), MIN: 250
   Noise Figure, dB: -
   Package: SOT323
      - BJT Cross-Reference Search

   

PBSS4160U Datasheet (PDF)

 ..1. Size:192K  nxp
pbss4160u.pdf pdf_icon

PBSS4160U

PBSS4160U60 V, 1 A NPN low VCEsat (BISS) transistorRev. 03 11 December 2009 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT323 (SC-70) Surface Mounted Device (SMD) plastic package.PNP complement: PBSS5160U.1.2 Features Low collector-emitter saturation voltage VCEsat High collector current c

 6.1. Size:207K  philips
pbss4160ds.pdf pdf_icon

PBSS4160U

PBSS4160DS60 V, 1 A NPN/NPN low VCEsat (BISS) transistorRev. 04 11 December 2009 Product data sheet1. Product profile1.1 General descriptionNPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package.PNP/PNP complement: PBSS5160DS.1.2 Features Low collector-emitter saturation voltage VCEsat High

 6.2. Size:341K  philips
pbss4160t.pdf pdf_icon

PBSS4160U

DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D088PBSS4160T60 V, 1 A NPN low VCEsat (BISS) transistorProduct data sheet 2004 May 12Supersedes data of 2003 Jun 24 NXP Semiconductors Product data sheet60 V, 1 A PBSS4160TNPN low VCEsat (BISS) transistorFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsatSYMBOL PARAMETER MAX. UNIT

 6.3. Size:258K  philips
pbss4160dpn.pdf pdf_icon

PBSS4160U

PBSS4160DPN60 V, 1 A NPN/PNP low VCEsat (BISS) transistorRev. 03 11 December 2009 Product data sheet1. Product profile1.1 General descriptionNPN/PNP low VCEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package.1.2 Features Low collector-emitter saturation voltage VCEsat High collector current capability: IC

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: TI413 | ZXTP2012Z | 3DD13007_Z8 | D60T5050 | 2SC3708 | RN2908AFS | KRA741U

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