All Transistors. PBSS4160U Datasheet

 

PBSS4160U Datasheet, Equivalent, Cross Reference Search


   Type Designator: PBSS4160U
   SMD Transistor Code: 52*
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.415 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 150 MHz
   Collector Capacitance (Cc): 10 pF
   Forward Current Transfer Ratio (hFE), MIN: 250
   Noise Figure, dB: -
   Package: SOT323

 PBSS4160U Transistor Equivalent Substitute - Cross-Reference Search

   

PBSS4160U Datasheet (PDF)

 ..1. Size:192K  nxp
pbss4160u.pdf

PBSS4160U
PBSS4160U

PBSS4160U60 V, 1 A NPN low VCEsat (BISS) transistorRev. 03 11 December 2009 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT323 (SC-70) Surface Mounted Device (SMD) plastic package.PNP complement: PBSS5160U.1.2 Features Low collector-emitter saturation voltage VCEsat High collector current c

 6.1. Size:207K  philips
pbss4160ds.pdf

PBSS4160U
PBSS4160U

PBSS4160DS60 V, 1 A NPN/NPN low VCEsat (BISS) transistorRev. 04 11 December 2009 Product data sheet1. Product profile1.1 General descriptionNPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package.PNP/PNP complement: PBSS5160DS.1.2 Features Low collector-emitter saturation voltage VCEsat High

 6.2. Size:341K  philips
pbss4160t.pdf

PBSS4160U
PBSS4160U

DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D088PBSS4160T60 V, 1 A NPN low VCEsat (BISS) transistorProduct data sheet 2004 May 12Supersedes data of 2003 Jun 24 NXP Semiconductors Product data sheet60 V, 1 A PBSS4160TNPN low VCEsat (BISS) transistorFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsatSYMBOL PARAMETER MAX. UNIT

 6.3. Size:258K  philips
pbss4160dpn.pdf

PBSS4160U
PBSS4160U

PBSS4160DPN60 V, 1 A NPN/PNP low VCEsat (BISS) transistorRev. 03 11 December 2009 Product data sheet1. Product profile1.1 General descriptionNPN/PNP low VCEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package.1.2 Features Low collector-emitter saturation voltage VCEsat High collector current capability: IC

 6.4. Size:324K  nxp
pbss4160ds.pdf

PBSS4160U
PBSS4160U

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 6.5. Size:258K  nxp
pbss4160qa.pdf

PBSS4160U
PBSS4160U

PBSS4160QA60 V, 1 A NPN low VCEsat (BISS) transistor23 August 2013 Product data sheet1. General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra smallDFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visibleand solderable side pads.PNP complement: PBSS5160QA.2. Features and benefits Very low collector-emitter

 6.6. Size:149K  nxp
pbss4160v.pdf

PBSS4160U
PBSS4160U

PBSS4160V60 V, 1 A NPN low VCEsat (BISS) transistorRev. 03 11 December 2009 Product data sheet1. Product profile1.1 General descriptionLow VCEsat (BISS) NPN transistor in a SOT666 plastic package.PNP complement: PBSS5160V.1.2 Features Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High efficiency, reduces heat generation Re

 6.7. Size:280K  nxp
pbss4160pans.pdf

PBSS4160U
PBSS4160U

PBSS4160PANS60 V, 1 A NPN/NPN low VCEsat (BISS) transistor11 February 2015 Product data sheet1. General descriptionNPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadlessmedium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plasticpackage with visible and solderable side pads.NPN/PNP complement: PBSS4160PANPS. PNP/PNP complement: PBSS5160PAPS.2.

 6.8. Size:359K  nxp
pbss4160panp.pdf

PBSS4160U
PBSS4160U

PBSS4160PANP60 V, 1 A NPN/PNP low VCEsat (BISS) transistor14 January 2013 Product data sheet1. General descriptionNPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadlessmedium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.NPN/NPN complement: PBSS4160PAN. PNP/PNP complement: PBSS5160PAP.2. Features and benefits Very low collecto

 6.9. Size:327K  nxp
pbss4160panps.pdf

PBSS4160U
PBSS4160U

PBSS4160PANPS60 V, 1 A NPN/NPN low VCEsat (BISS) transistor11 February 2015 Product data sheet1. General descriptionNPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadlessmedium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plasticpackage with visible and solderable side pads.NPN/NPN complement: PBSS4160PANS. PNP/PNP complement: PBSS5160PAPS.2.

 6.10. Size:567K  nxp
pbss4160t.pdf

PBSS4160U
PBSS4160U

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 6.11. Size:375K  nxp
pbss4160dpn.pdf

PBSS4160U
PBSS4160U

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 6.12. Size:268K  nxp
pbss4160pan.pdf

PBSS4160U
PBSS4160U

PBSS4160PAN60 V, 1 A NPN/NPN low VCEsat (BISS) transistor14 January 2013 Product data sheet1. General descriptionNPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadlessmedium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.NPN/PNP complement: PBSS4160PANP. PNP/PNP complement: PBSS5160PAP.2. Features and benefits Very low collecto

 6.13. Size:215K  nxp
pbss4160x.pdf

PBSS4160U
PBSS4160U

PBSS4160X60 V, 1 A NPN low VCEsat BISS transistor23 May 2017 Product data sheet1. General descriptionNPN low VCEsat Breakthrough in Smal Signal (BISS) transitor in a medium power SOT89 (SC-62)flat lead Surface-Mounted Device (SMD) plastic package.2. Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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