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PBSS5240V PDF Specs and Replacement


   Type Designator: PBSS5240V
   SMD Transistor Code: 52
   Material of Transistor: Si
   Polarity: PNP

Absolute Maximum Ratings


   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1.8 A
   Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics


   Transition Frequency (ft): 150 MHz
   Collector Capacitance (Cc): 12 pF
   Forward Current Transfer Ratio (hFE), MIN: 300
   Noise Figure, dB: -
   Package: SOT666
 

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PBSS5240V PDF detailed specifications

 ..1. Size:567K  nxp
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PBSS5240V

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain... See More ⇒

 ..2. Size:1566K  kexin
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PBSS5240V

SMD Type Transistors PNP Transistors PBSS5240V (KBSS5240V) SOT523-6(SOT666) Features 4 Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM 5 3 High collector current gain (hFE) at high IC 6 2 High efficiency leading to reduced heat generation 1.collector 2.collector Reduced printed-circuit board area requireme... See More ⇒

 6.1. Size:287K  philips
pbss5240t.pdf pdf_icon

PBSS5240V

DISCRETE SEMICONDUCTORS DATA SHEET PBSS5240T 40 V, 2 A PNP low VCEsat (BISS) transistor Product data sheet 2004 Jan 15 Supersedes data of 2001 Oct 31 NXP Semiconductors Product data sheet 40 V, 2 A PBSS5240T PNP low VCEsat (BISS) transistor FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage SYMBOL PARAMETER MAX. UNIT High current capability VCEO c... See More ⇒

 6.2. Size:197K  nxp
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PBSS5240V

PBSS5240X 40 V, 2 A PNP low VCEsat (BISS) transistor 19 October 2012 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 Surface-Mounted Device (SMD) plastic package. NPN complement PBSS4240X. 1.2 Features and benefits Low collector-emitter saturation voltage VCEsat H... See More ⇒

Detailed specifications: PBSS5160DS , PBSS5160T , PBSS5160U , PBSS5160V , PBSS5220T , PBSS5220V , PBSS5230T , PBSS5240T , 9014 , PBSS5240Y , PBSS5250T , PBSS5250X , PBSS5320D , PBSS5320T , PBSS5320X , PBSS5330PA , PBSS5330X .

History: KCX19 | KSC5031N | 2SAR542PFRA

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History: KCX19 | KSC5031N | 2SAR542PFRA

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