PBSS5240V Datasheet and Replacement
Type Designator: PBSS5240V
SMD Transistor Code: 52
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1.8 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 12 pF
Forward Current Transfer Ratio (hFE), MIN: 300
Noise Figure, dB: -
Package: SOT666
PBSS5240V Substitution
PBSS5240V Datasheet (PDF)
pbss5240v.pdf

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
pbss5240v.pdf

SMD Type TransistorsPNP TransistorsPBSS5240V (KBSS5240V) SOT523-6(SOT666) Features4 Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM53 High collector current gain (hFE) at high IC6 2 High efficiency leading to reduced heat generation1.collector2.collector Reduced printed-circuit board area requireme
pbss5240t.pdf

DISCRETE SEMICONDUCTORS DATA SHEETPBSS5240T40 V, 2 A PNP low VCEsat (BISS) transistorProduct data sheet 2004 Jan 15Supersedes data of 2001 Oct 31NXP Semiconductors Product data sheet40 V, 2 A PBSS5240TPNP low VCEsat (BISS) transistorFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltageSYMBOL PARAMETER MAX. UNIT High current capabilityVCEO c
pbss5240x.pdf

PBSS5240X40 V, 2 A PNP low VCEsat (BISS) transistor19 October 2012 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power andflat lead SOT89 Surface-Mounted Device (SMD) plastic package. NPN complement:PBSS4240X.1.2 Features and benefits Low collector-emitter saturation voltage VCEsat H
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2SB178B | BF509S | PMBT6428 | RN1963CT | NA52W | 2SC3896 | TP5132
Keywords - PBSS5240V transistor datasheet
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History: 2SB178B | BF509S | PMBT6428 | RN1963CT | NA52W | 2SC3896 | TP5132



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