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PDTA114EM PDF Specs and Replacement


   Type Designator: PDTA114EM
   SMD Transistor Code: E5
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 10 kOhm
   Built in Bias Resistor R2 = 10 kOhm
   Typical Resistor Ratio R1/R2 = 1

Absolute Maximum Ratings


   Maximum Collector Power Dissipation (Pc): 0.25 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics


   Collector Capacitance (Cc): 3 pF
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: SOT883
 

 PDTA114EM Substitution

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PDTA114EM PDF detailed specifications

 ..1. Size:859K  nxp
pdta114ee pdta114em pdta114et pdta114eu.pdf pdf_icon

PDTA114EM

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain... See More ⇒

 6.1. Size:58K  motorola
pdta114eu 6.pdf pdf_icon

PDTA114EM

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 PDTA114EU PNP resistor-equipped transistor 1999 Apr 13 Product specification Supersedes data of 1998 May 18 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA114EU FEATURES Built-in bias resistors R1 and R2 (typ. 10 k each) 3 handbook, 4 columns Simplification of circuit design ... See More ⇒

 6.2. Size:54K  motorola
pdta114eef 2.pdf pdf_icon

PDTA114EM

DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTA114EEF PNP resistor-equipped transistor 1999 May 21 Preliminary specification Supersedes data of 1998 Nov 11 Philips Semiconductors Preliminary specification PNP resistor-equipped transistor PDTA114EEF FEATURES PINNING Power dissipation comparable to SOT23 PIN DESCRIPTION Built-in bias resistors R1 and R2 (typ. 10 k each) 1... See More ⇒

 6.3. Size:58K  motorola
pdta114es 2.pdf pdf_icon

PDTA114EM

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 PDTA114ES PNP resistor-equipped transistor 1998 May 18 Product specification Supersedes data of 1997 Jul 02 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA114ES FEATURES Built-in bias resistors R1 and R2 (typ. 10 k each) Simplification o... See More ⇒

Detailed specifications: PDTA113EM , PDTA113ET , PDTA113EU , PDTA113ZE , PDTA113ZM , PDTA113ZT , PDTA113ZU , PDTA114EE , BD139 , PDTA114ET , PDTA114EU , PDTA114TE , PDTA114TM , PDTA114TT , PDTA114TU , PDTA114YE , PDTA114YM .

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