All Transistors. PDTA114TE Datasheet

 

PDTA114TE Datasheet and Replacement


   Type Designator: PDTA114TE
   SMD Transistor Code: 11
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 10 kOhm
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Collector Capacitance (Cc): 3 pF
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: SOT416
 
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PDTA114TE Datasheet (PDF)

 ..1. Size:29K  motorola
pdta114te sot416.pdf pdf_icon

PDTA114TE

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTA114TEPNP resistor-equipped transistorPreliminary specification 1998 Jul 23Supersedes data of 1997 Jul 14File under Discrete Semiconductors, SC04Philips Semiconductors Preliminary specificationPNP resistor-equipped transistor PDTA114TEFEATURES Built-in bias resistor R1 (typ. 10 k) Simplification of circuit design R

 ..2. Size:52K  motorola
pdta114te 2.pdf pdf_icon

PDTA114TE

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTA114TEPNP resistor-equipped transistorPreliminary specification 1998 Jul 23Supersedes data of 1997 Jul 14File under Discrete Semiconductors, SC04Philips Semiconductors Preliminary specificationPNP resistor-equipped transistor PDTA114TEFEATURES Built-in bias resistor R1 (typ. 10 k) Simplification of circuit design R

 ..3. Size:52K  philips
pdta114te 2.pdf pdf_icon

PDTA114TE

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTA114TEPNP resistor-equipped transistorPreliminary specification 1998 Jul 23Supersedes data of 1997 Jul 14File under Discrete Semiconductors, SC04Philips Semiconductors Preliminary specificationPNP resistor-equipped transistor PDTA114TEFEATURES Built-in bias resistor R1 (typ. 10 k) Simplification of circuit design R

 6.1. Size:51K  motorola
pdta114tt 3.pdf pdf_icon

PDTA114TE

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PDTA114TTPNP resistor-equipped transistor1999 Apr 13Objective specificationSupersedes data of 1998 May 18Philips Semiconductors Objective specificationPNP resistor-equipped transistor PDTA114TTFEATURES Built-in bias resistor R1 (typ. 10 k) Simplification of circuit design3handbook, 4 columns Reduce

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

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