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PDTA114TE . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PDTA114TE
   Código: 11
   Material: Si
   Polaridad de transistor: Pre-Biased-PNP
   Resistencia de Entrada Base R1 = 10 kOhm

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.15 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Capacitancia de salida (Cc): 3 pF
   Ganancia de corriente contínua (hfe): 200
   Paquete / Cubierta: SOT416
 

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PDTA114TE Datasheet (PDF)

 ..1. Size:29K  motorola
pdta114te sot416.pdf pdf_icon

PDTA114TE

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTA114TEPNP resistor-equipped transistorPreliminary specification 1998 Jul 23Supersedes data of 1997 Jul 14File under Discrete Semiconductors, SC04Philips Semiconductors Preliminary specificationPNP resistor-equipped transistor PDTA114TEFEATURES Built-in bias resistor R1 (typ. 10 k) Simplification of circuit design R

 ..2. Size:52K  motorola
pdta114te 2.pdf pdf_icon

PDTA114TE

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTA114TEPNP resistor-equipped transistorPreliminary specification 1998 Jul 23Supersedes data of 1997 Jul 14File under Discrete Semiconductors, SC04Philips Semiconductors Preliminary specificationPNP resistor-equipped transistor PDTA114TEFEATURES Built-in bias resistor R1 (typ. 10 k) Simplification of circuit design R

 ..3. Size:52K  philips
pdta114te 2.pdf pdf_icon

PDTA114TE

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTA114TEPNP resistor-equipped transistorPreliminary specification 1998 Jul 23Supersedes data of 1997 Jul 14File under Discrete Semiconductors, SC04Philips Semiconductors Preliminary specificationPNP resistor-equipped transistor PDTA114TEFEATURES Built-in bias resistor R1 (typ. 10 k) Simplification of circuit design R

 6.1. Size:51K  motorola
pdta114tt 3.pdf pdf_icon

PDTA114TE

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PDTA114TTPNP resistor-equipped transistor1999 Apr 13Objective specificationSupersedes data of 1998 May 18Philips Semiconductors Objective specificationPNP resistor-equipped transistor PDTA114TTFEATURES Built-in bias resistor R1 (typ. 10 k) Simplification of circuit design3handbook, 4 columns Reduce

Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2SD1047 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

History: STI13005-1 | PBSS8110T | ZXTP2013

 

 
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