PDTC114EE Datasheet. Specs and Replacement
Type Designator: PDTC114EE 📄📄
SMD Transistor Code: 9
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 10 kOhm
Built in Bias Resistor R2 = 10 kOhm
Typical Resistor Ratio R1/R2 = 1
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Collector Capacitance (Cc): 2.5 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: SOT416
- BJT ⓘ Cross-Reference Search
PDTC114EE datasheet
0.1. Size:55K motorola
pdtc114eef 2.pdf 
DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTC114EEF NPN resistor-equipped transistor 1999 May 31 Product specification Supersedes data of 1998 Nov 11 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114EEF FEATURES Power dissipation comparable to SOT23 Built-in bias resistors R1 and R2 3 handbook, halfpage (typ. 10 k each) 3 R1 ... See More ⇒
0.2. Size:55K philips
pdtc114eef 2.pdf
DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTC114EEF NPN resistor-equipped transistor 1999 May 31 Product specification Supersedes data of 1998 Nov 11 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114EEF FEATURES Power dissipation comparable to SOT23 Built-in bias resistors R1 and R2 3 handbook, halfpage (typ. 10 k each) 3 R1 ... See More ⇒
6.2. Size:58K motorola
pdtc114eu 4.pdf
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 PDTC114EU NPN resistor-equipped transistor 1999 Apr 16 Product specification Supersedes data of 1998 Nov 26 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114EU FEATURES Built-in bias resistors R1 and R2 (typ. 10 k each) 3 handbook, 4 columns Simplification of circuit design ... See More ⇒
6.3. Size:57K motorola
pdtc114es 3.pdf
DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC114ES NPN resistor-equipped transistor 1998 Nov 26 Product specification Supersedes data of 1998 May 18 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114ES FEATURES Built-in bias resistors R1 and R2 (typ. 10 k each) Simplification of circuit design handbook, halfpage 2 Reduces numbe... See More ⇒
6.4. Size:57K motorola
pdtc114ek 3.pdf
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D114 PDTC114EK NPN resistor-equipped transistor 1998 Nov 26 Product specification Supersedes data of 1998 May 19 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114EK FEATURES Built-in bias resistors R1 and R2 (typ. 10 k each) 3 Simplification of circuit design 3 Reduces number... See More ⇒
6.6. Size:58K philips
pdtc114eu 4.pdf
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 PDTC114EU NPN resistor-equipped transistor 1999 Apr 16 Product specification Supersedes data of 1998 Nov 26 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114EU FEATURES Built-in bias resistors R1 and R2 (typ. 10 k each) 3 handbook, 4 columns Simplification of circuit design ... See More ⇒
6.7. Size:174K philips
pdtc114e series.pdf
DISCRETE SEMICONDUCTORS DATA SHEET PDTC114E series NPN resistor-equipped transistor; R1 = 10 k , R2 = 10 k Product data sheet 2004 Aug 05 Supersedes data of 2003 Apr 10 NXP Semiconductors Product data sheet NPN resistor-equipped transistor; PDTC114E series R1 = 10 k , R2 = 10 k FEATURES QUICK REFERENCE DATA Built-in bias resistors SYMBOL PARAMETER TYP. MAX. UNIT ... See More ⇒
6.8. Size:57K philips
pdtc114es 3.pdf
DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC114ES NPN resistor-equipped transistor 1998 Nov 26 Product specification Supersedes data of 1998 May 18 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114ES FEATURES Built-in bias resistors R1 and R2 (typ. 10 k each) Simplification of circuit design handbook, halfpage 2 Reduces numbe... See More ⇒
6.9. Size:57K philips
pdtc114ek 3.pdf
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D114 PDTC114EK NPN resistor-equipped transistor 1998 Nov 26 Product specification Supersedes data of 1998 May 19 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114EK FEATURES Built-in bias resistors R1 and R2 (typ. 10 k each) 3 Simplification of circuit design 3 Reduces number... See More ⇒
Detailed specifications: PDTA144WM, PDTA144WT, PDTA144WU, PDTB113ET, PDTB113ZT, PDTB123ET, PDTB123TT, PDTB123YT, 431, PDTC114EM, PDTC114ET, PDTC114EU, PDTC114TE, PDTC114TM, PDTC114TT, PDTC114TU, PDTC114YE
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