PDTC114EE Datasheet, Equivalent, Cross Reference Search
Type Designator: PDTC114EE
SMD Transistor Code: 9
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 10 kOhm
Built in Bias Resistor R2 = 10 kOhm
Typical Resistor Ratio R1/R2 = 1
Maximum Collector Power Dissipation (Pc): 0.15
W
Maximum Collector-Base Voltage |Vcb|: 50
V
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Emitter-Base Voltage |Veb|: 10
V
Maximum Collector Current |Ic max|: 0.1
A
Max. Operating Junction Temperature (Tj): 150
°C
Collector Capacitance (Cc): 2.5
pF
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: SOT416
PDTC114EE Transistor Equivalent Substitute - Cross-Reference Search
PDTC114EE Datasheet (PDF)
pdtc114ee 4.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC114EENPN resistor-equipped transistor1999 May 18Product specificationSupersedes data of 1998 Nov 26Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114EEFEATURES PINNING Built-in bias resistors R1 and R2 (typ. 10 k each)PIN DESCRIPTION Simplification of circuit design1 base/input
pdtc114ee 4.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC114EENPN resistor-equipped transistor1999 May 18Product specificationSupersedes data of 1998 Nov 26Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114EEFEATURES PINNING Built-in bias resistors R1 and R2 (typ. 10 k each)PIN DESCRIPTION Simplification of circuit design1 base/input
pdtc114eef 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D425PDTC114EEFNPN resistor-equipped transistor1999 May 31Product specificationSupersedes data of 1998 Nov 11Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114EEFFEATURES Power dissipation comparable toSOT23 Built-in bias resistors R1 and R23handbook, halfpage(typ. 10 k each) 3R1
pdtc114eef 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D425PDTC114EEFNPN resistor-equipped transistor1999 May 31Product specificationSupersedes data of 1998 Nov 11Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114EEFFEATURES Power dissipation comparable toSOT23 Built-in bias resistors R1 and R23handbook, halfpage(typ. 10 k each) 3R1
pdtc114et 7.pdf
DISCRETE SEMICONDUCTORSDATA SHEEThalfpageM3D088PDTC114ETNPN resistor-equipped transistor1999 Apr 15Product specificationSupersedes data of 1998 Nov 26Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114ETFEATURES Built-in bias resistors R1 and R2(typ. 10 k each)3dbook, 4 columns3 Simplification of circuit designR1
pdtc114eu 4.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D102PDTC114EUNPN resistor-equipped transistor1999 Apr 16Product specificationSupersedes data of 1998 Nov 26Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114EUFEATURES Built-in bias resistors R1 and R2(typ. 10 k each)3handbook, 4 columns Simplification of circuit design
pdtc114es 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC114ESNPN resistor-equipped transistor1998 Nov 26Product specificationSupersedes data of 1998 May 18Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114ESFEATURES Built-in bias resistors R1 and R2(typ. 10 k each) Simplification of circuit designhandbook, halfpage2 Reduces numbe
pdtc114ek 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D114PDTC114EKNPN resistor-equipped transistor1998 Nov 26Product specificationSupersedes data of 1998 May 19Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114EKFEATURES Built-in bias resistors R1 and R2(typ. 10 k each)3 Simplification of circuit design3 Reduces number
pdtc114et 7.pdf
DISCRETE SEMICONDUCTORSDATA SHEEThalfpageM3D088PDTC114ETNPN resistor-equipped transistor1999 Apr 15Product specificationSupersedes data of 1998 Nov 26Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114ETFEATURES Built-in bias resistors R1 and R2(typ. 10 k each)3dbook, 4 columns3 Simplification of circuit designR1
pdtc114eu 4.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D102PDTC114EUNPN resistor-equipped transistor1999 Apr 16Product specificationSupersedes data of 1998 Nov 26Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114EUFEATURES Built-in bias resistors R1 and R2(typ. 10 k each)3handbook, 4 columns Simplification of circuit design
pdtc114e series.pdf
DISCRETE SEMICONDUCTORS DATA SHEETPDTC114E seriesNPN resistor-equipped transistor; R1 = 10 k, R2 = 10 kProduct data sheet 2004 Aug 05Supersedes data of 2003 Apr 10NXP Semiconductors Product data sheetNPN resistor-equipped transistor; PDTC114E seriesR1 = 10 k, R2 = 10 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNIT
pdtc114es 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC114ESNPN resistor-equipped transistor1998 Nov 26Product specificationSupersedes data of 1998 May 18Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114ESFEATURES Built-in bias resistors R1 and R2(typ. 10 k each) Simplification of circuit designhandbook, halfpage2 Reduces numbe
pdtc114ek 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D114PDTC114EKNPN resistor-equipped transistor1998 Nov 26Product specificationSupersedes data of 1998 May 19Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114EKFEATURES Built-in bias resistors R1 and R2(typ. 10 k each)3 Simplification of circuit design3 Reduces number
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
