PEMB9 Datasheet, Equivalent, Cross Reference Search
Type Designator: PEMB9
SMD Transistor Code: Z6
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 10 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 0.21
Maximum Collector Power Dissipation (Pc): 0.3
W
Maximum Collector-Base Voltage |Vcb|: 50
V
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Emitter-Base Voltage |Veb|: 10
V
Maximum Collector Current |Ic max|: 0.1
A
Max. Operating Junction Temperature (Tj): 150
°C
Collector Capacitance (Cc): 3
pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SOT666
PEMB9 Transistor Equivalent Substitute - Cross-Reference Search
PEMB9 Datasheet (PDF)
pemb9 pumb9.pdf
DISCRETE SEMICONDUCTORS DATA SHEETPEMB9; PUMB9PNP/PNP resistor-equipped transistors; R1 = 10 k, R2 = 47 kProduct data sheet 2003 Oct 03Supersedes data of 2003 Feb 03NXP Semiconductors Product data sheetPNP/PNP resistor-equipped transistors; PEMB9; PUMB9R1 = 10 k, R2 = 47 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNIT
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 13009 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .