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PEMH30 Specs and Replacement


   Type Designator: PEMH30
   SMD Transistor Code: 2S
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 2.2 kOhm
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Collector Capacitance (Cc): 2.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: SOT666
 

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PEMH30 detailed specifications

 ..1. Size:72K  philips
 pemh30 pumh30.pdf pdf_icon

PEMH30

PEMH30; PUMH30 NPN/NPN double resistor-equipped transistors; R1 = 2.2 k , R2 = open Rev. 01 28 March 2006 Product data sheet 1. Product profile 1.1 General description NPN/NPN double Resistor-Equipped Transistors (RET) in Surface Mounted Device (SMD) plastic packages. Table 1. Product overview Type number Package NPN/PNP PNP/PNP complement complement Philips JEITA PEMH30 SOT66... See More ⇒

Detailed specifications: PEMH15 , PEMH16 , PEMH17 , PEMH18 , PEMH19 , PEMH2 , PEMH20 , PEMH24 , TIP3055 , PEMH4 , PEMH7 , PEMH9 , PEMT1 , PEMX1 , PEMZ1 , PEMZ7 , PHD13003C .

Keywords - PEMH30 transistor specs

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