PEMH4 Datasheet. Specs and Replacement

Type Designator: PEMH4  📄📄 

SMD Transistor Code: H4

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 10 kOhm

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Collector Capacitance (Cc): 2.5 pF

Forward Current Transfer Ratio (hFE), MIN: 200

Noise Figure, dB: -

Package: SOT666

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PEMH4 datasheet

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PEMH4

DISCRETE SEMICONDUCTORS DATA SHEET PEMH4; PUMH4 NPN/NPN resistor-equipped transistors; R1 = 10 k , R2 = open Product data sheet 2004 Apr 14 Supersedes data of 2003 Oct 02 NXP Semiconductors Product data sheet NPN/NPN resistor-equipped transistors; PEMH4; PUMH4 R1 = 10 k , R2 = open FEATURES QUICK REFERENCE DATA Built-in bias resistors SYMBOL PARAMETER TYP. MAX. UNIT ... See More ⇒

Detailed specifications: PEMH16, PEMH17, PEMH18, PEMH19, PEMH2, PEMH20, PEMH24, PEMH30, D882, PEMH7, PEMH9, PEMT1, PEMX1, PEMZ1, PEMZ7, PHD13003C, PHD13005

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