PHD13003C PDF and Equivalents Search

 

PHD13003C Specs and Replacement

Type Designator: PHD13003C

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 2.1 W

Maximum Collector-Base Voltage |Vcb|: 700 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Collector Current |Ic max|: 1.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 9

Noise Figure, dB: -

Package: TO92

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PHD13003C datasheet

 ..1. Size:136K  philips

phd13003c.pdf pdf_icon

PHD13003C

PHD13003C NPN power transistor with integrated diode Rev. 01 29 July 2010 Product data sheet 1. Product profile 1.1 General description High voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel emitter-collector diode in a SOT54 plastic package 1.2 Features and benefits Fast switching High voltage capability High typical DC current... See More ⇒

 ..2. Size:202K  cn ween semi

phd13003c.pdf pdf_icon

PHD13003C

IMPORTANT NOTICE 10 December 2015 1. Global joint venture starts operations as WeEn Semiconductors Dear customer, As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset Management Co. Ltd established Bipolar Power joint venture (JV), WeEn Semiconductors, which will be used in future Bipolar Power documents together with new contact details. In this document where ... See More ⇒

 7.1. Size:181K  nxp

phd13005.pdf pdf_icon

PHD13003C

PHD13005 NPN power transistor with integrated diode Rev. 02 29 July 2010 Product data sheet 1. Product profile 1.1 General description High voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel E-C diode in a SOT78 plastic package. 1.2 Features and benefits Fast switching Integrated anti-parallel E-C diode High voltage capability L... See More ⇒

 7.2. Size:242K  cn ween semi

phd13005.pdf pdf_icon

PHD13003C

IMPORTANT NOTICE 10 December 2015 1. Global joint venture starts operations as WeEn Semiconductors Dear customer, As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset Management Co. Ltd established Bipolar Power joint venture (JV), WeEn Semiconductors, which will be used in future Bipolar Power documents together with new contact details. In this document where ... See More ⇒

Detailed specifications: PEMH30, PEMH4, PEMH7, PEMH9, PEMT1, PEMX1, PEMZ1, PEMZ7, 2N2222A, PHD13005, PHE13003A, PHE13003C, PHE13005, PHE13005X, PHE13007, PHE13009, PIMD2

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