PHD13003C . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: PHD13003C
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 2.1 W
   Tensión colector-base (Vcb): 700 V
   Tensión colector-emisor (Vce): 400 V
   Corriente del colector DC máxima (Ic): 1.5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 9
Paquete / Cubierta: TO92

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PHD13003C Datasheet (PDF)

..1. Size:136K philips
phd13003c.pdf

PHD13003CNPN power transistor with integrated diodeRev. 01 29 July 2010 Product data sheet1. Product profile1.1 General descriptionHigh voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel emitter-collector diode in a SOT54 plastic package1.2 Features and benefits Fast switching High voltage capability High typical DC current

..2. Size:202K cn ween semi
phd13003c.pdf

IMPORTANT NOTICE10 December 20151. Global joint venture starts operations as WeEn SemiconductorsDear customer,As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang AssetManagement Co. Ltd established Bipolar Power joint venture (JV), WeEn Semiconductors, whichwill be used in future Bipolar Power documents together with new contact details.In this document where

7.1. Size:181K nxp
phd13005.pdf

PHD13005NPN power transistor with integrated diodeRev. 02 29 July 2010 Product data sheet1. Product profile1.1 General descriptionHigh voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel E-C diode in a SOT78 plastic package.1.2 Features and benefits Fast switching Integrated anti-parallel E-C diode High voltage capability L

7.2. Size:242K cn ween semi
phd13005.pdf