PHD13003C datasheet, аналоги, основные параметры

Наименование производителя: PHD13003C  📄📄 

Тип материала: Si

Полярность: NPN

Предельные значения

Максимальная рассеиваемая мощность (Pc): 2.1 W

Макcимально допустимое напряжение коллектор-база (Ucb): 700 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 400 V

Макcимальный постоянный ток коллектора (Ic): 1.5 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Статический коэффициент передачи тока (hFE): 9

Корпус транзистора: TO92

  📄📄 Копировать 

 Аналоги (замена) для PHD13003C

- подборⓘ биполярного транзистора по параметрам

 

PHD13003C даташит

 ..1. Size:136K  philips
 phd13003c.pdf pdf_icon

PHD13003C

PHD13003C NPN power transistor with integrated diode Rev. 01 29 July 2010 Product data sheet 1. Product profile 1.1 General description High voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel emitter-collector diode in a SOT54 plastic package 1.2 Features and benefits Fast switching High voltage capability High typical DC current

 ..2. Size:202K  cn ween semi
 phd13003c.pdf pdf_icon

PHD13003C

IMPORTANT NOTICE 10 December 2015 1. Global joint venture starts operations as WeEn Semiconductors Dear customer, As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset Management Co. Ltd established Bipolar Power joint venture (JV), WeEn Semiconductors, which will be used in future Bipolar Power documents together with new contact details. In this document where

 7.1. Size:181K  nxp
 phd13005.pdf pdf_icon

PHD13003C

PHD13005 NPN power transistor with integrated diode Rev. 02 29 July 2010 Product data sheet 1. Product profile 1.1 General description High voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel E-C diode in a SOT78 plastic package. 1.2 Features and benefits Fast switching Integrated anti-parallel E-C diode High voltage capability L

 7.2. Size:242K  cn ween semi
 phd13005.pdf pdf_icon

PHD13003C

IMPORTANT NOTICE 10 December 2015 1. Global joint venture starts operations as WeEn Semiconductors Dear customer, As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset Management Co. Ltd established Bipolar Power joint venture (JV), WeEn Semiconductors, which will be used in future Bipolar Power documents together with new contact details. In this document where

ПОКАЗАТЬ ЕЩЁ

Другие транзисторы: PEMH30, PEMH4, PEMH7, PEMH9, PEMT1, PEMX1, PEMZ1, PEMZ7, 2N2222A, PHD13005, PHE13003A, PHE13003C, PHE13005, PHE13005X, PHE13007, PHE13009, PIMD2