Справочник транзисторов. PHD13003C

 

Биполярный транзистор PHD13003C - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: PHD13003C
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 2.1 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 700 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 400 V
   Макcимальный постоянный ток коллектора (Ic): 1.5 A
   Предельная температура PN-перехода (Tj): 150 °C
   Статический коэффициент передачи тока (hfe): 9
   Корпус транзистора: TO92

 Аналоги (замена) для PHD13003C

 

 

PHD13003C Datasheet (PDF)

 ..1. Size:136K  philips
phd13003c.pdf

PHD13003C
PHD13003C

PHD13003CNPN power transistor with integrated diodeRev. 01 29 July 2010 Product data sheet1. Product profile1.1 General descriptionHigh voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel emitter-collector diode in a SOT54 plastic package1.2 Features and benefits Fast switching High voltage capability High typical DC current

 ..2. Size:202K  cn ween semi
phd13003c.pdf

PHD13003C
PHD13003C

IMPORTANT NOTICE10 December 20151. Global joint venture starts operations as WeEn SemiconductorsDear customer,As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang AssetManagement Co. Ltd established Bipolar Power joint venture (JV), WeEn Semiconductors, whichwill be used in future Bipolar Power documents together with new contact details.In this document where

 7.1. Size:181K  nxp
phd13005.pdf

PHD13003C
PHD13003C

PHD13005NPN power transistor with integrated diodeRev. 02 29 July 2010 Product data sheet1. Product profile1.1 General descriptionHigh voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel E-C diode in a SOT78 plastic package.1.2 Features and benefits Fast switching Integrated anti-parallel E-C diode High voltage capability L

 7.2. Size:242K  cn ween semi
phd13005.pdf

PHD13003C
PHD13003C

IMPORTANT NOTICE10 December 20151. Global joint venture starts operations as WeEn SemiconductorsDear customer,As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang AssetManagement Co. Ltd established Bipolar Power joint venture (JV), WeEn Semiconductors, whichwill be used in future Bipolar Power documents together with new contact details.In this document where

Другие транзисторы... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
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