PIMH9
Datasheet, Equivalent, Cross Reference Search
Type Designator: PIMH9
SMD Transistor Code: H9
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.6
W
Maximum Collector-Base Voltage |Vcb|: 50
V
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Emitter-Base Voltage |Veb|: 10
V
Maximum Collector Current |Ic max|: 0.1
A
Max. Operating Junction Temperature (Tj): 150
°C
Collector Capacitance (Cc): 2.5
pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package:
SOT457
PIMH9
Transistor Equivalent Substitute - Cross-Reference Search
PIMH9
Datasheet (PDF)
..1. Size:151K philips
pimh9 pumh9 pemh9.pdf
DISCRETE SEMICONDUCTORS DATA SHEETPIMH9; PUMH9; PEMH9NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 47 kProduct data sheet 2004 Apr 14Supersedes data of 2003 Sep 15 NXP Semiconductors Product data sheetNPN/NPN resistor-equipped transistors; PIMH9; PUMH9; R1 = 10 k, R2 = 47 k PEMH9FEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER T
..2. Size:282K nxp
pimh9 pumh9 pemh9.pdf
DISCRETE SEMICONDUCTORS DATA SHEETPIMH9; PUMH9; PEMH9NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 47 kProduct data sheet 2004 Apr 14Supersedes data of 2003 Sep 15 NXP Semiconductors Product data sheetNPN/NPN resistor-equipped transistors; PIMH9; PUMH9; R1 = 10 k, R2 = 47 k PEMH9FEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER T
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