PMBT5550
Datasheet, Equivalent, Cross Reference Search
Type Designator: PMBT5550
SMD Transistor Code: 1F_p1F_t1F_W1F
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.25
W
Maximum Collector-Base Voltage |Vcb|: 160
V
Maximum Collector-Emitter Voltage |Vce|: 140
V
Maximum Emitter-Base Voltage |Veb|: 6
V
Maximum Collector Current |Ic max|: 0.3
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 100
MHz
Collector Capacitance (Cc): 6
pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package:
SOT23
PMBT5550
Transistor Equivalent Substitute - Cross-Reference Search
PMBT5550
Datasheet (PDF)
..1. Size:49K philips
pmbt5550 3.pdf 
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PMBT5550NPN high-voltage transistor1999 Apr 15Product specificationSupersedes data of 1997 Jun 16Philips Semiconductors Product specificationNPN high-voltage transistor PMBT5550FEATURES PINNING Low current (max. 300 mA)PIN DESCRIPTION Low voltage (max. 140 V).1 base2 emitterAPPLICATIONS3 collector
..2. Size:112K philips
pmbt5550.pdf
DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D088PMBT5550NPN high-voltage transistorProduct data sheet 2004 Jan 21Supersedes data of 1999 Apr 15NXP Semiconductors Product data sheetNPN high-voltage transistor PMBT5550FEATURES PINNING Low current (max. 300 mA)PIN DESCRIPTION Low voltage (max. 140 V).1 base2 emitterAPPLICATIONS3 collector Telep
..3. Size:310K nxp
pmbt5550.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
7.1. Size:111K philips
pmbt5551.pdf
DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D088PMBT5551NPN high-voltage transistorProduct data sheet 2004 Jan 21Supersedes data of 1999 Apr 15NXP Semiconductors Product data sheetNPN high-voltage transistor PMBT5551FEATURES PINNING Low current (max. 300 mA)PIN DESCRIPTION High voltage (max. 160 V).1 base2 emitterAPPLICATIONS3 collector Gene
7.2. Size:49K philips
pmbt5551 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PMBT5551NPN high-voltage transistor1999 Apr 15Product specificationSupersedes data of 1997 Jul 02Philips Semiconductors Product specificationNPN high-voltage transistor PMBT5551FEATURES PINNING Low current (max. 300 mA)PIN DESCRIPTION High voltage (max. 160 V).1 base2 emitterAPPLICATIONS3 collector
7.3. Size:111K nxp
pmbt5551.pdf
DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D088PMBT5551NPN high-voltage transistorProduct data sheet 2004 Jan 21Supersedes data of 1999 Apr 15NXP Semiconductors Product data sheetNPN high-voltage transistor PMBT5551FEATURES PINNING Low current (max. 300 mA)PIN DESCRIPTION High voltage (max. 160 V).1 base2 emitterAPPLICATIONS3 collector Gene
Datasheet: 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
, 2N3207
, B772
, 2N3209
, 2N3209AQF
, 2N3209CSM
, 2N3209DCSM
, 2N3209L
, 2N321
, 2N3210
, 2N3211
.
