PMBT5550 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PMBT5550  📄📄 

Código: 1F_p1F_t1F_W1F

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.25 W

Tensión colector-base (Vcb): 160 V

Tensión colector-emisor (Vce): 140 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 0.3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 100 MHz

Capacitancia de salida (Cc): 6 pF

Ganancia de corriente contínua (hFE): 60

Encapsulados: SOT23

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PMBT5550 datasheet

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PMBT5550

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PMBT5550

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 PMBT5550 NPN high-voltage transistor Product data sheet 2004 Jan 21 Supersedes data of 1999 Apr 15 NXP Semiconductors Product data sheet NPN high-voltage transistor PMBT5550 FEATURES PINNING Low current (max. 300 mA) PIN DESCRIPTION Low voltage (max. 140 V). 1 base 2 emitter APPLICATIONS 3 collector Telep

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PMBT5550

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

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PMBT5550

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 PMBT5551 NPN high-voltage transistor Product data sheet 2004 Jan 21 Supersedes data of 1999 Apr 15 NXP Semiconductors Product data sheet NPN high-voltage transistor PMBT5551 FEATURES PINNING Low current (max. 300 mA) PIN DESCRIPTION High voltage (max. 160 V). 1 base 2 emitter APPLICATIONS 3 collector Gene

MOSTRAR MÁS

Otros transistores... PMBT2222, PMBT2222A, PMBT2369, PMBT2907, PMBT2907A, PMBT3906, PMBT4401, PMBT4403, 2SD313, PMBT5551, PMBT6428, PMBT6429, PMBTA45, PMMT491A, PMMT591A, PMSS3904, PMSS3906