Биполярный транзистор PMBT5550 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: PMBT5550
Маркировка: 1F_p1F_t1F_W1F
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.25 W
Макcимально допустимое напряжение коллектор-база (Ucb): 160 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 140 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 0.3 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 100 MHz
Ёмкость коллекторного перехода (Cc): 6 pf
Статический коэффициент передачи тока (hfe): 60
Корпус транзистора: SOT23
PMBT5550 Datasheet (PDF)
pmbt5550 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PMBT5550NPN high-voltage transistor1999 Apr 15Product specificationSupersedes data of 1997 Jun 16Philips Semiconductors Product specificationNPN high-voltage transistor PMBT5550FEATURES PINNING Low current (max. 300 mA)PIN DESCRIPTION Low voltage (max. 140 V).1 base2 emitterAPPLICATIONS3 collector
pmbt5550.pdf
DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D088PMBT5550NPN high-voltage transistorProduct data sheet 2004 Jan 21Supersedes data of 1999 Apr 15NXP Semiconductors Product data sheetNPN high-voltage transistor PMBT5550FEATURES PINNING Low current (max. 300 mA)PIN DESCRIPTION Low voltage (max. 140 V).1 base2 emitterAPPLICATIONS3 collector Telep
pmbt5550.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
pmbt5551.pdf
DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D088PMBT5551NPN high-voltage transistorProduct data sheet 2004 Jan 21Supersedes data of 1999 Apr 15NXP Semiconductors Product data sheetNPN high-voltage transistor PMBT5551FEATURES PINNING Low current (max. 300 mA)PIN DESCRIPTION High voltage (max. 160 V).1 base2 emitterAPPLICATIONS3 collector Gene
pmbt5551 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PMBT5551NPN high-voltage transistor1999 Apr 15Product specificationSupersedes data of 1997 Jul 02Philips Semiconductors Product specificationNPN high-voltage transistor PMBT5551FEATURES PINNING Low current (max. 300 mA)PIN DESCRIPTION High voltage (max. 160 V).1 base2 emitterAPPLICATIONS3 collector
pmbt5551.pdf
DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D088PMBT5551NPN high-voltage transistorProduct data sheet 2004 Jan 21Supersedes data of 1999 Apr 15NXP Semiconductors Product data sheetNPN high-voltage transistor PMBT5551FEATURES PINNING Low current (max. 300 mA)PIN DESCRIPTION High voltage (max. 160 V).1 base2 emitterAPPLICATIONS3 collector Gene
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