All Transistors. PUMB10 Datasheet

 

PUMB10 Datasheet and Replacement


   Type Designator: PUMB10
   SMD Transistor Code: B*0
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 2.2 kOhm
   Built in Bias Resistor R2 = 47 kOhm
   Typical Resistor Ratio R1/R2 = 0.047
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 180 MHz
   Collector Capacitance (Cc): 3 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SOT363
 

 PUMB10 Substitution

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PUMB10 Datasheet (PDF)

 ..1. Size:801K  nxp
pemb10 pumb10.pdf pdf_icon

PUMB10

PEMB10; PUMB10PNP/PNP resistor-equipped transistors;R1 = 2.2 k, R2 = 47 kRev. 3 3 January 2012 Product data sheet1. Product profile1.1 General descriptionPNP/PNP Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic packages.Table 1. Product overviewType number Package NPN/PNP NPN/NPN Package complement complement configurationNXP JEITAPEM

 9.1. Size:137K  philips
pemb11 pumb11.pdf pdf_icon

PUMB10

DISCRETE SEMICONDUCTORS DATA SHEETPEMB11; PUMB11PNP/PNP resistor-equipped transistors; R1 = 10 k, R2 = 10 kProduct data sheet 2003 Oct 03Supersedes data of 2001 Sep 13NXP Semiconductors Product data sheetPNP/PNP resistor-equipped transistors; PEMB11; PUMB11R1 = 10 k, R2 = 10 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. U

 9.2. Size:137K  philips
pemb1 pumb1.pdf pdf_icon

PUMB10

DISCRETE SEMICONDUCTORS DATA SHEETPEMB1; PUMB1PNP/PNP resistor-equipped transistors; R1 = 22 k, R2 = 22 kProduct data sheet 2003 Oct 15Supersedes data of 2001 Sep 13NXP Semiconductors Product data sheetPNP/PNP resistor-equipped transistors; PEMB1; PUMB1R1 = 22 k, R2 = 22 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNIT

 9.3. Size:60K  philips
pumb11 1.pdf pdf_icon

PUMB10

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageMBD128PUMB11PNP resistor-equipped doubletransistorProduct specification 2000 Aug 08Philips Semiconductors Product specificationPNP resistor-equipped double transistor PUMB11FEATURES Transistors with built-in bias resistors R1 and R2(typ. 10 k each) No mutual interference between the transistors6 5 4handbook,

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , BC546 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2SB1343 | BC234 | 2SB1386PGP | PTB20206 | BC206B | BC214L | BC847BHZG

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