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PUMB10 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PUMB10
   Código: B*0
   Material: Si
   Polaridad de transistor: Pre-Biased-PNP
   Resistencia de Entrada Base R1 = 2.2 kOhm
   Resistencia Base-Emisor R2 = 47 kOhm
   Ratio típica de resistencia R1/R2 = 0.047

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.3 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 180 MHz
   Capacitancia de salida (Cc): 3 pF
   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: SOT363
     - Selección de transistores por parámetros

 

PUMB10 Datasheet (PDF)

 ..1. Size:801K  nxp
 pemb10 pumb10.pdf pdf_icon

PUMB10

PEMB10; PUMB10PNP/PNP resistor-equipped transistors;R1 = 2.2 k, R2 = 47 kRev. 3 3 January 2012 Product data sheet1. Product profile1.1 General descriptionPNP/PNP Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic packages.Table 1. Product overviewType number Package NPN/PNP NPN/NPN Package complement complement configurationNXP JEITAPEM

 9.1. Size:137K  philips
 pemb11 pumb11.pdf pdf_icon

PUMB10

DISCRETE SEMICONDUCTORS DATA SHEETPEMB11; PUMB11PNP/PNP resistor-equipped transistors; R1 = 10 k, R2 = 10 kProduct data sheet 2003 Oct 03Supersedes data of 2001 Sep 13NXP Semiconductors Product data sheetPNP/PNP resistor-equipped transistors; PEMB11; PUMB11R1 = 10 k, R2 = 10 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. U

 9.2. Size:137K  philips
 pemb1 pumb1.pdf pdf_icon

PUMB10

DISCRETE SEMICONDUCTORS DATA SHEETPEMB1; PUMB1PNP/PNP resistor-equipped transistors; R1 = 22 k, R2 = 22 kProduct data sheet 2003 Oct 15Supersedes data of 2001 Sep 13NXP Semiconductors Product data sheetPNP/PNP resistor-equipped transistors; PEMB1; PUMB1R1 = 22 k, R2 = 22 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNIT

 9.3. Size:60K  philips
 pumb11 1.pdf pdf_icon

PUMB10

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageMBD128PUMB11PNP resistor-equipped doubletransistorProduct specification 2000 Aug 08Philips Semiconductors Product specificationPNP resistor-equipped double transistor PUMB11FEATURES Transistors with built-in bias resistors R1 and R2(typ. 10 k each) No mutual interference between the transistors6 5 4handbook,

MOSTRAR MÁS

Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: CZTA77 | 2SC354 | 2N3763S

 

 
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